Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Enhanced Electroluminescence from Nanoscale Silicon P+–n Junctions Made with an Anodic Aluminum Oxide Pattern

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Enhanced Electroluminescence Efficiency of Oxidized Amorphous Silicon Nitride Light-Emitting Devices by Modulating Si∕N Ratio

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Electroluminescence from Sno2/P(+)-Si Heterostructured Light-Emitting Device: Enhancing Its Intensity Via Capping A Tio2 Film

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

Enhanced Electroluminescence from Si Quantum Dots-Based Light-Emitting Devices with Si Nanowire Structures and Hydrogen Passivation

CMOS-compatible Light-Emitting Devices Based on Thin Aluminum Nitride Film Containing Al Nanocrystals

Enhanced electroluminescence from nc-Si/SiO2 pillar arrays using nanosphere lithography

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Low Turn-on and High Efficient Oxidized Amorphous Silicon Nitride Light-Emitting Devices Induced by High Density Amorphous Silicon Nanoparticles

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions

Electroluminescence from Silicon-Based Single Ion Transport Light Emitting Electrochemical Cell

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Electroluminescence from Sio2 Thin Film Embedded with Self-Assembled Gold Nanoparticles