Abstract:With the progress of wide bandgap semiconductors, compact solid-state light-emitting devices for the ultraviolet wavelength region are of considerable technological interest as alternatives to conventional ultraviolet lamps in recent years. Here, the potential of aluminum nitride (AlN) as an ultraviolet luminescent material was studied. An ultraviolet light-emitting device, equipped with a carbon nanotube (CNT) array as the field-emission excitation source and AlN thin film as cathodoluminescent material, was fabricated. In operation, square high-voltage pulses with a 100 Hz repetition frequency and a 10% duty ratio were applied to the anode. The output spectra reveal a dominant ultraviolet emission at 330 nm with a short-wavelength shoulder at 285 nm, which increases with the anode driving voltage. This work has explored the potential of AlN thin film as a cathodoluminescent material and provides a platform for investigating other ultrawide bandgap (UWBG) semiconductors. Furthermore, while using AlN thin film and a carbon nanotube array as electrodes, this ultraviolet cathodoluminescent device can be more compact and versatile than conventional lamps. It is anticipated to be useful in a variety of applications such as photochemistry, biotechnology and optoelectronics devices.

CMOS-compatible Light-Emitting Devices Based on Thin Aluminum Nitride Film Containing Al Nanocrystals

Room-Temperature Visible Electroluminescence from Aluminum Nitride Thin Film Embedded with Aluminum Nanocrystals

Yellow Electroluminescence from Sputtering Synthesized Aluminum Nitride Nanocomposite Thin Film Containing Aluminum Nanocrystals

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Thin Film Micro-Scaled Cold Cathode Structures of Undoped and Si-Doped Aln Grown on Sic Substrate with Low Turn-On Voltage

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

RF Reactive Sputtering AlN Thin Film at Room Temperature for CMOS-compatible MEMS Application

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Enhanced Electroluminescence from Nanoscale Silicon P+–n Junctions Made with an Anodic Aluminum Oxide Pattern

Electron Emission Characteristics of Al–AlN Granular Films

Electroluminescence from Au/Si Nitride Film/si with the Film Prepared by Electron Cyclotron Resonance Method

Photoluminescence and Its Time Evolution of AlN Thin Films

265 Nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Effects of Si-doping on Field Emission Characteristics of AlN Films Grown on N-Type 6H-Sic by MOCVD

Controlled Growth and Field Emission of Vertically Aligned AlN Nanostructures with Different Morphologies

Influence of Al-doping on Electroluminescence of Silicon-Based Films

Molecular Beam Epitaxy of Single-Crystalline Aluminum Film for Low Threshold Ultraviolet Plasmonic Nanolasers

P-Doping-Free Iii-Nitride High Electron Mobility Light-Emitting Diodes and Transistors