Abstract:The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the AlN epilayer, two AlN-thick epi-film samples were grown on c-plane sapphire substrates. The optical and structural characteristics of AlN films are meticulously examined by using high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), a dual-beam ultraviolet-visible spectrophotometer, and spectroscopic ellipsometry (SE). It has been found that the quality of AlN can be controlled by adjusting the AlN film thickness. The phenomenon, in which the thicker AlNn film exhibits lower dislocations than the thinner one, demonstrates that thick AlN epitaxial samples can work as a strain relief layer and, in the meantime, help significantly bend the dislocations and decrease total dislocation density with the thicker epi-film. The Urbach's binding energy and optical bandgap (Eg) derived by optical transmission (OT) and SE depend on crystallite size, crystalline alignment, and film thickness, which are in good agreement with XRD and SEM results. It is concluded that under the treatment of thickening film, the essence of crystal quality is improved. The bandgap energies of AlN samples obtained from SE possess larger values and higher accuracy than those extracted from OT. The Bose–Einstein relation is used to demonstrate the bandgap variation with temperature, and it is indicated that the thermal stability of bandgap energy can be improved with an increase in film thickness. It is revealed that when the thickness increases to micrometer order, the thickness has little effect on the change of Eg with temperature.

Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals

A study of sputtering process for nanocrystalline FeAlN soft magnetic thin films

Ultra-violet Light Assisted Reactive RF Magnetron Sputtering Deposition of AlN Thin Films at Room Temperature

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

Aluminum Nitride Ultraviolet Light-Emitting Device Excited via Carbon Nanotube Field-Emission Electron Beam

Cathodoluminescence studies of point defects in aluminum nitride

Photoluminescence and Its Time Evolution of AlN Thin Films

Single-Photon Emission from Point Defects in Aluminum Nitride Films

Photochromism and influence of point defect charge states on optical absorption in aluminum nitride (AlN)

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Evolution of Aluminum Nitride Nanostructures from Nanoflower to Thin Film on Silicon Substrate by Direct Nitridation of Aluminum Precursor

Low-temperature Synthesis of AlN Films Through Electron Cyclotron Resonance Plasma-Aided Reactive Pulsed Laser Deposition

Investigating the physical mechanism of ion-slicing in AlN and hetero-integrating AlN thin film on Si(100) substrate

Single-dislocation ultraviolet light emission

Study of Instability in the Field Electron Emission from Amorphous Diamond Films

Growth-microstructure-thermal property relations in AlN thin films

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

Charging effect of Al2O3 thin films containing Al nanocrystals

Ultraviolet to mid-infrared optical properties of sputtered Al(Sc)N-on-SiO_2 thin films and experimental demonstration of AlN integrated photonic devices in the telecom C-band

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures