Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence
N. A. Sobolev,A. E. Kalyadin,E. I. Shek,K. F. Shtel'makh,A. K. Gutakovskii,V. I. Vdovin,A. N. Mikhaylov,D. I. Tetel'baum,D. Li,D. Yang,L. I. Fedina
DOI: https://doi.org/10.1016/j.matpr.2018.03.067
2018-01-01
Abstract:Electroluminescence (EL) from light-emitting diodes (LEDs) at wavelengths in the range 1000-1650 nm, current densities of up to 10 A/cm2, and temperature of 64 K has been studied. p-Cz-Si wafers were irradiated with low-energy electrons (a variant of the technique based on rapid thermal annealing) and annealed in a chlorine-containing atmosphere at 1100°C. To obtain p-n junctions and ohmic contacts, layers of polycrystalline silicon doped with phosphorus and boron were deposited by vapour-phase epitaxy onto the opposite sides of the wafers. The dislocation structure in the samples under study consists of gliding 60⁰-dislocations and perfect and faulted dipoles. An analysis showed that the transformation of EL spectra with current is precisely described by six Gaussian lines. The peak wavelengths are current-independent and equal to 1235, 1309, 1369, 1414, 1472, and 1515 nm. The current dependences of the intensity of the EL lines have been determined.