Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Electroluminescence from Sio2 Thin Film Embedded with Self-Assembled Gold Nanoparticles

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Electroluminescence from Au/(Nanoscale Ge/Nanoscale Sio2) Superlattices/P-Si

Electroluminescence from Au/Si Oxynitride Film/si Structures with the Films Having Different Chemical Compositions

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence of SnO2∕p-Si heterojunction

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Electroluminescence from Sno2/P(+)-Si Heterostructured Light-Emitting Device: Enhancing Its Intensity Via Capping A Tio2 Film

Room-Temperature 1.54-Mu M Electroluminescence From The Au/Nanometer (Sio2 : Er/Si/Sio2 : Er)/N(+)-Si Structure

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Electroluminescence from Tio2/P(+)-Si Heterostructure

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Electroluminescence from Metal-Oxide-semiconductor Devices with Erbium-Doped CeO2 Films on Silicon