Abstract:Ge-rich SiGe thin films were epitaxially grown on Si (100) substrate by reactive thermal chemical vapor deposition. Germanium tetrafluoride (GeF4) was selected as the Ge source material and disilane (Si2H6) is used as the reductant gas. By designing the surface reaction, high quality Ge-rich Si1-xGex epilayers were prepared under low temperature (350 degrees C) conditions. Effect of hydrogen annealing on the microstructure and electrical property was studied. The results reveal that the surface morphology of SiGe epilayer deteriorates drastically if the annealing temperature is higher than 700 degrees C. The optimal annealing temperature is found to be 650 degrees C. Under this condition, the threading dislocation density decreases from 3.7 X 10(6) cm(-2) to 4.3 X 10(5) cm(-2) and the surface root mean square roughness is also slightly decreased from 1.27 nm to 1.18 nm. Simultaneously, the crystalline quality of the SiGe epilayers is effectively improved. Carrier mobility of the annealed samples, measured by Hall-effect equipment, is enhanced obviously as compared to that of the as-deposited samples. These results suggest that the properties of the annealed SiGe thin, films, epitaxially grown by reactive thermal chemical vapor deposition at low-temperature, can be comparable to those of SiGe epilayers grown by high-temperature techniques.

Study Of The Growth Characteristics Of Sicge Layers Grown On 6h-Sic Substrates

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

Island-growth of SiCGe films on SiC

Structure analysis of SiCGe films grown on SiC

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate

Effects of Buffer Layer on Hetero-Epi-Growth of Sicge on 6H-Sic

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Pseudomorphic Sic Alloys Formed by Ge Ion Implantation

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

The growth and investigation of SiGe films on buried Ge islands

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.