Abstract:For strained-silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs), the formation of a low-resistance source and drain region is as important in terms of enhanced performance as optimizing the strain-induced increase in inversion-carrier mobility. The crystallographic, compositional, and electrical properties of an arsenic-ion implanted strained silicon/Si0.7Ge0.3 heterostructure were investigated in order to acquire basic information for fabricating low-resistance source and drain region of the n-channel strained-silicon MOSFET. The strained-silicon layer is completely recrystallized by rapid thermal annealing after arsenic implantation, but misfit dislocations were formed by annealing (at 1000 °C) in the case thickness of the strained-silicon layer exceeding the critical thickness. Arsenic diffusivity in strained silicon was identical to that in silicon, whereas that in SiGe was higher than that in silicon. Germanium recoil and enhanced diffusion caused by arsenic implantation to the SiGe layer was observed. This phenomenon can degrade the abruptness of the strained-silicon/SiGe interface during the formation of a shallow source and drain region. Solubility limit of arsenic in strained silicon was 2×1020 cm−3 and identical to that in silicon, on the other hand, the solubility limit in Si0.7Ge0.3 reduced by half. Electron mobility in strained silicon was by about 20%–30% higher than that in silicon, and that in Si0.7Ge0.3 was by about 20%–30% lower than those in silicon. In order to reduce parasitic resistance in the shallow source and drain region, thicker strained silicon layer is thus desirable, however, it should be very careful to control the strained-silicon thickness below the critical value.

Pseudomorphic Sic Alloys Formed by Ge Ion Implantation

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Silicon-germanium alloys and heterostructures: Optical and electronic properties

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Study Of The Growth Characteristics Of Sicge Layers Grown On 6h-Sic Substrates

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Growth and doping of silicon carbide with germanium: a review

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis

In-situ formation of SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate