Abstract:This work investigates the optical and interfacial properties of epitaxially fused direct GaInP/Si heterojunctions realized by the corrugated epitaxial lateral overgrowth (CELOG) approach. To provide a broad analysis of the above heterojunction, photoluminescence (PL), cathodoluminescence (CL), Raman, and high-resolution transmission electron microscopy (TEM) were employed in this study. The enhanced luminescence intensity was observed in the direct GaInP/Si heterojunction in the cross-sectional CL because of the reduced defect density in the CELOG GaInP. The spatial resolution dependent PL and CL spectra of GaInP on Si yielded the composition variation of GaInP arising from the anisotropic growth behavior of CELOG. The Ga composition, x, in GaxIn1−xP/Si at the interface deduced from the lattice constant measured by TEM has a good agreement with the results of PL and CL. Low thermal and lattice mismatch strain in CELOG GaInP on Si were revealed by the Raman spectra. TEM investigation further revealed the atomic structure of some planar defects in CELOG GaInP over Si. It is confirmed that although a thin atomic disorder was observed on the surface of Si substrate, an epitaxially fused GaInP/Si heterojunction with a reduced threading dislocation density of ∼6.4 × 107 cm−2 in comparison to ∼4.8 × 108 cm−2 in the InP seed on Si has been successfully fabricated by the CELOG technique despite about 4% lattice mismatch between GaInP and Si. The findings of this study demonstrate the great potential of the CELOG technique for promoting monolithic integration of III-V/Si-based optoelectronics.

Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

Study Of The Growth Characteristics Of Sicge Layers Grown On 6h-Sic Substrates

Photoluminescence in SiCGe Thin Films Grown on 6H-Sic

Optical and Electrical Character of SICGe/SIC Heterojunction Phototransistor with Charge Compensation Layer

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ge Related Defect Energy And Microcavity Effect In Gan Epitaxial Layer

Island-growth of SiCGe films on SiC

Optical and Interfacial Properties of Epitaxially Fused GaInP/Si Heterojunction

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Influence of Defects in SiC (0001) on Epitaxial Graphene

Effects of Buffer Layer on Hetero-Epi-Growth of Sicge on 6H-Sic

Cathodoluminescence Study of 3C-Sic Epilayers Grown on 4H-Sic Substrates

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Emission from Defects in Thin Gan Epilayers Grown on Vicinal 4H-Sic Substrates

Preparation and characterization of GaP/Si heterojunction

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Electronic structure of the Ge/Si(105) hetero-interface