Anisotropic wet etching in application of SOI-based nano-optoelectronic devices

Sun Fei,Zhou Zhiping

DOI: https://doi.org/10.1109/INOW.2007.4302910

2007-01-01

Abstract:A size reduction technology based on anisotropic wet etching is presented, which can break through the limitation of lithography resolution and find extensive application in SOI-based nano-optoelectronic devices. © 2007 IEEE.

What problem does this paper attempt to address?

Ultra-high Precision Nano Additive Manufacturing of Metal Oxide Semiconductors Via Multi-Photon Lithography

Chun Cao,Xianmeng Xia,Xiaoming Shen,Xiaobing Wang,Zhenyao Yang,Qiulan Liu,Chenliang Ding,Dazhao Zhu,Cuifang Kuang,Xu Liu

DOI: https://doi.org/10.1038/s41467-024-52929-8

IF: 16.6

2024-01-01

Nature Communications

Abstract:As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer process, which is time-consuming and costly. Here, we report a strategy, using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, to realize ultra-high precision additive manufacturing of metal oxides. As a result, we gain metal oxides including ZnO, CuO and ZrO2 with a critical dimension of 35 nm, which sets a benchmark for additive manufacturing of metal oxides. Besides, atomic doping can be easily accomplished by including the target element in precursor photoresist, and heterogeneous structures can also be created by multiple multi-photon lithography, allowing this strategy to accommodate the requirements of various semiconductor devices. For instance, we fabricate an ZnO photodetector by the proposed strategy. By using metal-organic compounds as solid precursor photoresist for multi-photon lithography and post-sintering, Cao et al. report ultra-high precision nano additive manufacturing of 2D and 3D metal oxide semiconductors with dimension down to 35 nm.
Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Kexiang Hu,Qingkang Wang

DOI: https://doi.org/10.1166/jnn.2013.7129

2013-01-01

Journal of Nanoscience and Nanotechnology

Abstract:The direct modification of silicon, other semiconductors and metal surfaces by the process of local anodic oxidation via electric field from scanning probe microscope (SPM) in conjunction with the absorbed water in atmosphere as the electrolyte is a promising method for fabricating micro/nanostructures. We demonstrated that the process of SPM oxidation and anisotropic wet chemical etching is a low cost and reliable method to produce smooth and uniform etched structures on silicon substrates. Using silicon oxide nanopatterns produced on H-passivated (110) Si surfaces as etching masks, and due to the large (110)/(111) anisotropic ratio of etching rate and the large Si/SiO2 etching selectivity at a relatively low etching temperature and an optimal concentration of aqueous KOH etchant, high-aspect-ratio grating structures have been fabricated by anisotropic wet etching. The approach of combining scanning probe lithography (SPL) with etching technique provides an alternative lithography route to fabricate functional nanophotonic or nanoelectronic devices.
Fabrication Method of Silicon Nanostructures by Anisotropic Etching

Weihua Han,Xiang Yang,Ying Wang,Fuhua Yang,Jinzhong Yu

DOI: https://doi.org/10.1109/group4.2008.4638126

2008-01-01

Abstract:A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.
Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Y Y Zhang,J Zhang,G Luo,X Zhou,G Y Xie,T Zhu,Z F Liu

DOI: https://doi.org/10.1088/0957-4484/16/4/015

IF: 3.5

2005-01-01

Nanotechnology

Abstract:A rational approach is described for fabricating multilevel silicon-based nanostructures via scanning probe oxidation (SPO) and anisotropic wet etching. Using silicon oxide nanopatterns on Si(100) and Si(110) surfaces created by SPO as masks, two-dimensional (2D) nanostructures with high aspect ratio and a variety of patterns can be formed by anisotropic wet etching with KOH. By employing a mixture of KOH solutions and isopropyl alcohol (IPA) as an alternative to KOH alone, control of the morphology of the etched silicon surfaces, crucial for further fabrication, was greatly improved. The SPO and etching processes can be continually repeated on the 2D nanostructures, permitting the formation of various multilevel silicon-based nanostructures, including a T-gate structure useful for electronic circuitry. In addition, these multilevel silicon structures can be used as nanoimprint moulds for their rapid replication.
Study on Silicon Deep Wet Etching Technology for MEMS

NI Ye,DAI Qiang,ZHANG Huaiwu,ZHONG Zhiyong,YU Qi

2011-01-01

Abstract:Aiming at the difficulties of silicon deep wet etching technology for MEMS,the wet technique on the basis of the anisotropy erosion of silicon was explored,and experimental research on the effect of the concentration,temperature of the etching solution and volume of additive on the etching rate,surface roughness and mask technique were carried out.In the end,the optimum condition of etching was achieved.A good 330μm deep groove is etched adopting this technique,which is promising for the processing of MEMS components.
Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide (Small Methods 8/2022)

Dachuang Shi,Yun Chen,Zijian Li,Shankun Dong,Liyi Li,Maoxiang Hou,Huilong Liu,Shenghe Zhao,Xin Chen,Ching‐Ping Wong,Ni Zhao

DOI: https://doi.org/10.1002/smtd.202270049

IF: 12.4

2022-08-29

Small Methods

Abstract:Inside Back Cover In article number 2200329, Chen, Zhao, and co‐workers demonstrated an etching structure that exploits anisotropic charge carrier flow to enable high‐throughput, external‐bias‐free wet etching of SiC micro‐/nanostructures with record high etching speed and aspect ratio.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
All-Water Etching-Free Electron Beam Lithography for On-Chip Nanomaterials

Xiaohan Wang,Xiao Dai,Hao Wang,Jiong Wang,Qi Chen,Fengnan Chen,Qinghua Yi,Rujun Tang,Liang Gao,Liang Ma,Chen Wang,Xiangyi Wang,Guanglong He,Yue Fei,Yanqiu Guan,Biao Zhang,Yue Dai,Xuecou Tu,Lijian Zhang,Labao Zhang,Guifu Zou

DOI: https://doi.org/10.1021/acsnano.2c12387

IF: 17.1

2023-01-01

ACS Nano

Abstract:Electron beam lithography uses an accelerated electron beam to fabricate patterning on an electron-beam-sensitive resist but requires complex dry etching or lift-off processes to transfer the pattern to the substrate or film on the substrate. In this study, etching-free electron beam lithography is developed to directly write a pattern of various materials in all-water processes, achieving the desired semiconductor nanopatterns on a silicon wafer. Introduced sugars are copolymerized with metal ions-coordinated polyethylenimine under the action of electron beams. The all-water process and thermal treatment result in nanomaterials with satisfactory electronic properties, indicating that diverse on-chip semiconductors (e.g., metal oxides, sulfides, and nitrides) can be directly printed on-chip by an aqueous solution system. As a demonstration, zinc oxide patterns can be achieved with a line width of 18 nm and a mobility of 3.94 cm2 V-1 s-1. This etching-free electron beam lithography strategy provides an efficient alternative for micro/nanofabrication and chip manufacturing.
A Novel Anisotropic Wet Etching Process of (100)-Silicon with Areaefficiency on Convex Corner Compensation Patterns

Shaoxiao Nie,Xu Ma,Fanrui Meng,Cong Zhou,Jie Wang,Yunfei Liu,Wenhua Xu,Zhenchuan Yang,Yilong Hao,Chengchen Gao

2023-01-01

Abstract:This work demonstrates an anisotropic wet etching process of (100)-silicon wafers for the realization of compact mesa structures under deep etching conditions. Utilizing specially designed 100-beam compensation patterns, this process is a two–step etching method in which the wafers are etched in surfactant added TMAH solutions and pure TMAH solutions in succession. Process simulation by software Intellisuite was used to help decide the specific parameters of the process, compared to the state-of-art technologies, the area of the compensation patterns can be reduced by 90% at most, and results from a following experiment proved the validity of the simulation and effectiveness of the process.
Anisotropic Wet Etching for Micro-Fabrication

M. Shikida

DOI: https://doi.org/10.1541/IEEJSMAS.128.341

Abstract:Anisotropic wet etching process is now widely used in MEMS fabrication. The etching characteristics, mechanism of etch-pit formations on both of {100} and {111} Si surfaces, and micro pyramid formation on the etched {100} surface is described in this review paper. Advanced processes for fabricating complicated 3-D structures by wet etching are also explained.

Engineering,Materials Science
New Variable Selective Etching Technology for Thick SOI Devices

Teng Liu,Wen-Tong Zhang,Zhi-Li Zhang,Hua Song,Nai-Long He,Sen Zhang,Zhao-Ji Li,Bo Zhang

DOI: https://doi.org/10.1109/ICSICT55466.2022.9963177

2022-01-01

Abstract:In this paper, a new variable selective etching (VSE) technology is proposed for thick silicon-on-insulator (SOI) devices. The VSE is realized by introducing a 5-layer composite hard-mask to realize the silicon etching with a selectivity ratio of 35: 1 and the buried oxide layer (BOX) with a ratio of 100: 1. The VSE technology provides a core process engineering for advanced deep trench isolation (DTI) technology with trench electrode connected to the substrate. The VSE technology is demonstrated by experiments of a SOI with 7 µm silicon and 1.5 µm BOX layer, which revealed that the VSE technology can realize a steep and continuous etching for both silicon and oxide layer and the wafer bow is also be reduced by the stress compensation of the hard-mask.
Advanced Etching Techniques of LiNbO3 Nanodevices

Bowen Shen,Di Hu,Cuihua Dai,Xiaoyang Yu,Xiaojun Tan,Jie Sun,Jun Jiang,Anquan Jiang

DOI: https://doi.org/10.3390/nano13202789

IF: 5.3

2023-10-18

Nanomaterials

Abstract:Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabrication. Building upon the current etching researches, this study explores various etching methods using instruments capable of generating diverse plasma densities, such as dry etching in reactive ion etching (RIE) and inductively coupled plasma (ICP), proton exchange-enhanced etching, and wet chemical etching following high-temperature reduction treatment, as well as hybrid dry and wet etching. Ultimately, after employing RIE dry etching combined with wet etching, following a high-temperature reduction treatment, an etching rate of 10 nm/min and pretty 90° sidewall angles were achieved. Furthermore, high etching rates of 79 nm/min with steep sidewall angles of 83° were obtained using ICP dry etching. Additionally, using SiO2 masks, a high etching rate of 108 nm/min and an etching selectivity ratio of 0.86:1 were achieved. Distinct etching conditions yielded diverse yet exceptional results, providing multiple processing paths of etching for the versatile application of LNO.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Study on Silicon Sieve Holes Array for Future Lithography Application

Weihua Si,Ming Yin,Jian Qin,Zewen Liu

DOI: https://doi.org/10.1149/1.3567614

2011-01-01

ECS Transactions

Abstract:Silicon sieve with nano-scale holes array used as atomic lithography aperture had been realized with a method combining of deep dry etching and silicon anisotropic wet etching. The influence of etchant concentration and temperature on the etching rate is carefully studied. Unusual bath temperature at 40° was used in the wet etching process. With a sputtered layer of Cr (300nm) as the wet etching mask and a layer of Al (700nm) as the deep dry etching mask nano holes array with 108nm feature size are obtained on single crystalline silicon.
Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Jiaqi Zhang,Yichang Wu,Guofang Yang,Dazheng Chen,Jincheng Zhang,Hailong You,Chunfu Zhang,Yue Hao

DOI: https://doi.org/10.3390/nano11113085

IF: 5.3

2021-11-16

Nanomaterials

Abstract:As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, such that silicon nano-film devices are released from the donor substrate and can be transferred. However, in the process of wet etching the SiO2 sacrificial layer present underneath the single-crystal silicon nano-film by using the transfer technology, the etching is often incomplete, which seriously affects the efficiency and quality of the transfer and makes the device preparation impossible. This article analyzes the principle of incomplete etching, and compares the four factors that affect the etching process, including the size of Si nano-film on top of the sacrificial layer, the location of the anchor point, the shape of Si nano-film on top of the sacrificial layer, and the thickness of the sacrificial layer. Finally, the etching conditions are obtained to avoid the phenomenon of incomplete etching of the sacrificial layer, so that the transfer technology can be better applied in the field of heterogeneous integration. Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Development of Reactive-Ion Etching for ZnO-Based Nanodevices

Kin Kiong Lee, Yi Luo, Xiaofeng Lu, Peng Bao,A. M. Song

DOI: https://doi.org/10.1109/TNANO.2010.2085013

2011-01-01

IEEE Transactions on Nanotechnology

Abstract:We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen gases. The etching conditions were optimized to ensure high selectivity of ZnO to poly(methyl methacrylate) (PMMA), which is commonly used as an etching mask in nanolithography. We also show the feasibility of fabricating nanofeatures patterned onto a thin layer (<;200 nm) of PMMA by nanoimprint technique and electron -beam lithography with the optimized RIE process parameters. Finally, planar nanodevices including self-switching diodes and side-gate transistors were successfully fabricated.
Massive Fabrication of Silicon Nanopore Arrays with Tunable Shapes

Tao Deng,Yifan Wang,Qi Chen,Houjin Chen,Zewen Liu

DOI: https://doi.org/10.1016/j.apsusc.2016.07.171

IF: 6.7

2016-01-01

Applied Surface Science

Abstract:This paper presents an improved wet etching method for the massive production of silicon nanopore arrays. The shape (length-width ratio) of the nanopore can be easily tuned by changing the wet etching mask and controlling the etching time. By adopting silicon on insulator (SOI) wafers, the pore size uniformity of the nanopore arrays was significantly improved. Square and rectangular nanopore arrays with feature pore sizes down to 18 nm were controllably fabricated. Experiments demonstrated that such Si nanopore arrays with tunable pore shapes and sizes can act as reusable stencils for the nanostencil lithography, to directly deposit large-scale ordered arrays of surface micro/nano structures on various substrates with less time and low cost. (C) 2016 Elsevier B.V. All rights reserved.
Ultrahigh Precision Low-Cost Pinpointed SiO2 Patterns Nanofabrication by Using Traditional MEMS Fabrication Processes

Pengfei Dai,Honglu Zhang,Jie Chao,Chunhai Fan,Yuelin Wang,Tie Li

DOI: https://doi.org/10.1007/s00542-015-2600-x

2015-01-01

Microsystem Technologies

Abstract:Recent years, nanoscale patterns transfer technique from DNA origami molecules to SiO2 layer has been a promising approach of silicon based nanofabrication process. However, researchers find it difficult to locate SiO2 nano patterns with origami's shapes. Here, we present a novel and low-cost approach of ultrahigh precision SiO2 patterns nanofabrication in target position. Traditional contact lithography process is used to fabricate nanoscale silicon oxide islands array in this paper, which are used to pinpoint the position of ultrahigh precision nano patterns. Precise controllability sacrificial layer etching is the key process to realize nanoscale control of islands in process. This fabrication method is a simple and cost-effective method with high yield, which will hopefully make contributions for higher precision nanofabrication technology in the future.
Recent Frontiers in Anisotropic Wet Chemical Etching Techniques for Precision Surface Modification of Industrial-Grade Bulk Crystalline Silicon Wafers: Enhancing Performance in Photovoltaics and MEMS Devices

DOI: https://doi.org/10.1007/s12633-024-02963-4

IF: 3.4

2024-04-23

Silicon

Abstract:Surface treatment is a pivotal technique for enhancing the properties of industrial-grade bulk c-silicon wafers, revolutionizing their applicability in both PV and MEMS applications. In this paper we presents a brief overview of recent advancements in anisotropic etching methodologies, elucidating their role in tailoring surface morphology, roughness, and texturing of silicon wafers with precision and control. Fundamental insights into the chemical reactions governing the anisotropic etching process are explored, highlighting its capacity to produce intricate surface structures beneficial for light management in PV cells and optimized mechanical characteristics for MEMS devices. Encompassing diverse anisotropic etching solutions and their effects on surface morphology, addressing the intricate interplay between etchant composition, temperature, and process duration. Strategies for achieving superior selectivity, reproducibility, and uniformity across large-scale silicon wafers are discussed, elucidating the nuanced control required for industrial implementation.

materials science, multidisciplinary,chemistry, physical
Fabrication of 2D silicon nano-mold by side etch lift-off method

Ran Guo,Liping Qi,Liang Xu,Lingpeng Liu,Lei Sun,Zhifu Yin,Kehong Li,Helin Zou

DOI: https://doi.org/10.1088/1361-6528/abf50e

IF: 3.5

2021-04-20

Nanotechnology

Abstract:Abstract Nano-imprint technology is a method of nano-pattern reproduction, has the characteristics of high resolution, high throughput, and low-cost. It can reduce the complexity and cost of the equipment while improving the resolution, which considered a promising industrial production technology. The key to nanoimprinting lies in the mold, and the quality of the mold directly determines the quality of the imprinted graphics. Here, a method for fabricating sub-100 nm concave 2D silicon nano-mold by side etch lift-off is proposed. The effects of different wet etching time and the metal deposition angle on the width of nanochannels were studied. The measurement result of dry etching shows that on the entire 4 inch silicon wafer, the width of the nanochannel varies by 4% and the depth by 2%. The width of the nanochannel between chips varies by 0.7%, and the depth variation is 1%. With this new method, high-precision and large-scale silicon nano-mold can be produced, which has great potential for realizing high-precision and low-cost manufacturing of nano devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Fabricating A Variety Of Micro-Optics Structures Using Anisotropic Etching Of Silicon

Bin Li,Mingyue Wei,Meng Wang,Xin Zhang,Changsheng Xie,Tianxu Zhang

DOI: https://doi.org/10.1117/12.867722

2010-01-01

Abstract:A variety of micro-optics structures can be fabricated using a dual-step anisotropic etching of KOH: H2O over (100) silicon. A key step of this method is the design of mask layout. In accordance with the expected profile, this paper implemented a set of algorithms through computer programming to design the mask, and after setting a set of parameters, the final etching profile can be simulated. According to the data of the mask layout generated by the program, a lithography mask is fabricated, and then through the single-step lithography and dual-step wet etching, the expected profile is acquired. The mask can be fast and efficiently designed using this method, and through follow-up procedures, many kinds of aspherical and irregular micro-structures can be obtained. In this study, a series of 512x512 arrays of concave lenses are designed using the algorithm, and then the follow-up procedures are carried out using the most appropriate corrosion issues calculated by the program, and finally get a good result. At the end of this study, the lens' surface profile, roughness, and optical performance, etc, are tested. Test results show that the micro lens are very neat, and the hole size and depth of each unit have basically the same size. The surface profile and roughness already achieve optical mirror requirements, and the structures have good optical performances.
Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

Li Lin,Yiyu Ou,Martin Aagesen,Flemming Jensen,Berit Herstrøm,Haiyan Ou

DOI: https://doi.org/10.3390/mi8010013

IF: 3.4

2017-01-01

Micromachines

Abstract:A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL) followed by a dry etching process. Afterwards, the Si stamp was employed in nanoimprint lithography (NIL) assisted with a dry etching process to produce nanoholes on the SiO2 layer. The demonstrated approach has advantages such as a high resolution in nanoscale by EBL and good reproducibility by NIL. In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size variation of the nanostructures resulting from exposure parameters in EBL, the pattern transfer during nanoimprint in NIL, and subsequent etching processes of SiO2 were also studied quantitatively. By this method, a hexagonal arranged hole array in SiO2 with a hole diameter ranging from 45 to 75 nm and a pitch of 600 nm was demonstrated on a four-inch wafer.

Anisotropic wet etching in application of SOI-based nano-optoelectronic devices

Ultra-high Precision Nano Additive Manufacturing of Metal Oxide Semiconductors Via Multi-Photon Lithography

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Fabrication Method of Silicon Nanostructures by Anisotropic Etching

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Study on Silicon Deep Wet Etching Technology for MEMS

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide (Small Methods 8/2022)

All-Water Etching-Free Electron Beam Lithography for On-Chip Nanomaterials

A Novel Anisotropic Wet Etching Process of (100)-Silicon with Areaefficiency on Convex Corner Compensation Patterns

Anisotropic Wet Etching for Micro-Fabrication

New Variable Selective Etching Technology for Thick SOI Devices

Advanced Etching Techniques of LiNbO3 Nanodevices

Study on Silicon Sieve Holes Array for Future Lithography Application

Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application

Development of Reactive-Ion Etching for ZnO-Based Nanodevices

Massive Fabrication of Silicon Nanopore Arrays with Tunable Shapes

Ultrahigh Precision Low-Cost Pinpointed SiO2 Patterns Nanofabrication by Using Traditional MEMS Fabrication Processes

Recent Frontiers in Anisotropic Wet Chemical Etching Techniques for Precision Surface Modification of Industrial-Grade Bulk Crystalline Silicon Wafers: Enhancing Performance in Photovoltaics and MEMS Devices

Fabrication of 2D silicon nano-mold by side etch lift-off method

Fabricating A Variety Of Micro-Optics Structures Using Anisotropic Etching Of Silicon

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide