Effect of Dielectric Layer Surface Roughness on the Isolation of an RF MEMS Switch

LEI Xiaofeng,LIU Zewen,XUAN Yun,WEI Jia,LI Zhijian,LIU Litian

DOI: https://doi.org/10.3321/j.issn:1000-0054.2006.01.032

2006-01-01

Abstract:The paper presents study on the surface roughness of the dielectric layer on electrodes and its effect on the isolation of the radio-frequency micoelectromechanical(RF MEMS) switches.The study is based on a double-bridge capacitive RF MEMS switch.In this switch,SiN is used as the dielectric layer with the lower electrode fabricated with gold or aluminum.The RF network measurements show that the isolation performance of the two switches is very different.The surface roughness Ra of the SiN dielectric layer on the different metallic electrodes measured with an atomic force microscope was 13.050 nm for SiN/Au and 66.680 nm for SiN/Al.The corresponding degradation factors of the off-state capacitance for the two electrodes were 0.52 and 0.15.A roughness of less than 5 nm is needed to obtain good isolation performance.