Abstract:Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the influence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

The Effect of Dielectric Charging on Capacitive Mems Switch

Intermodulation Distortion in MEMS Capacitive Switches under High RF Power

Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches

Effect of Dielectric Layer Surface Roughness on the Isolation of an RF MEMS Switch

An Analytical Model for High Performance Capacitive RF MEMS Switch Design

Improved Working Properties of RF MEMS Switch by Pre-Injecting Charges into the Dielectric Layer

Effect of Etch Holes on the Capacitance and Pull-In Voltage in Mems Tunable Capacitors

Reliability research of capacitive RF-MEMS switch

Failure Modes of Doubly Supported Capacitive Rf Mems Switches

Design and Experimental Validation of A Restoring Force Enhanced Rf Mems Capacitive Switch with Stiction-Recovery Electrodes

Design and Fabrication of a Low Insertion Loss Capacitive RF MEMS Switch with Novel Micro-Structures for Actuation

Study on the Reliability of Capacitive Shunt RF MEMS Switch

Design and Fabrication of a Capacitive Series RF MEMS Switch

Design, optimization and simulation of a low-voltage shunt capacitive RF-MEMS switch

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Design of A Novel Bulk Micro-Machined Rf Mems Switch

Design and fabrication of X-band capacitive MEMS switches

A laterally thermally-actuated RF MEMS capacitive switch with parylene as dielectric layer

Design and Modeling of a Continuously Variable Piezoelectric RF MEMS Switch

Comparison of the RF MEMS Switches with Dielectric Layers on the Bridge’s Lower Surface and on the Transmission Line

Numerical Analysis of Pull-In Voltage for Contact Mems Switches in Switched-Line Phase Shifter Application