Theoretical Study Of Electrostatic-Field-Induced Bending Of Membrane In Shunt-Capacitance Mems Rf Switches
jia ming,guo fangmin,zhu ziqiang,lai zongsheng,chu jianpeng,wang yuelin,ge yiaohong,chen siqing,wang weiyuan
DOI: https://doi.org/10.1109/ICSICT.2001.982025
2001-01-01
Abstract:The paper describes the simulation of the performance of MEMS RF switches by using ANSYS as a primary tool. it starts with mechanic field, then electrostatic field, and then couples the effect of the two fields. The Young's Module is one of the major factors of the pull-down voltage, it analyzes the An, compose of different ratio Al-Si, and the simulation is very Significantly guiding experiments.