Pull-In/Out Analysis Of Nano/Microelectromechanical Switches With Defective Oxide Layers

yang xu,n r aluru
DOI: https://doi.org/10.1063/1.3211111
IF: 4
2009-01-01
Applied Physics Letters
Abstract:We investigate the effect of surface and interior defects such as vacancies and broken bonds on the performance of nano/microelectromechanical (N/MEMS) switches. By combining multiscale electrostatic analysis with mechanical analysis, we compute the capacitance-voltage and pull-in/out voltages of N/MEMS switches in the presence of defects in the dielectric oxide layer. Our results indicate that both surface and interior defects can change the pull-in/out voltages leading to significant voltage offsets. These voltage offsets can lead to an eventual failure of the N/MEMS switch.
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