Reliability research of capacitive RF-MEMS switch

Mingxin Song,Rui Wu,Qian Liu,Hong Wang,Zuobao Cao,Minghua Chen,Jinghua Yin
DOI: https://doi.org/10.4028/www.scientific.net/AMR.753-755.2507
2013-01-01
Abstract:This paper presents the model of capacitive RF-MEMS switch for the lifetime prediction. The model is based on dielectric charging failure mechanism. The simulation results show that lifetime can reach 1000 hours when elastic coefficient (K) adopts 4-16N/m, Si3N4 as dielectric material, 0.4-1 mu m of dielectric thickness, 2-5 mu m of plate distance, less than 20V of driven voltage.
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