Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Electrical Properties In Hexagonal Inn Thin Films

Carrier Transport Characteristics in Hexagonal Inn Thin Films

ELECTRICAL PROPERTIES OF SEMICONDUCTOR InN

Capacitance Characteristics In Inn Thin Films Grown By Reactive Sputtering On Gaas

Optical Constants of InN Thin Films on (111) GaAs Grown by Reactive Magnetron Sputtering

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Micro-Raman Study of Hexagonal Inn Thin Films Grown by Reactive Sputtering on Gaas

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Influence of GaN Buffer Layer for InN Growth

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Bandtail Characteristics in InN Thin Films

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Structural and Electrical Properties of AlxIn1-xN (0.10≤x≤0.94) Films Grown on Sapphire Substrates

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films