Heat-treating effect on the properties of Pb1-xla x(Zr0.4Ti0.6)O3 ferroelectric thin film prepared by a modified sol-gel process

FuWen Shi,Genshui Wang,Xiangjian Meng,JingLan Sun,Junhao Chu
DOI: https://doi.org/10.1117/12.607555
2005-01-01
Abstract:2 mol% Lanthanum doped lead zirconate titanate Pb(Zr0.4Ti0.6)O-3 ferroelectric thin film were successfully deposited by a modified sol-gel method on(111) Pt/Ti/SiO2/Si(100) substrate, the effect of heat-treatment on the properties of microstructure and ferroelectric was investigated. It is shown that deposited on (111)Pt lead to (111) preferred orientation. The PLZT thin film annealing at 700degreesC show good ferroelctric properties with a large remnant polarization of 40mu C/cm(2),a spontaneous polarization of 75.7 muC/cm(2), and a coercive field of 112kV/cm under an electric field of 650kV/cm. The dielectric constant increased with annealing temperature.
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