Abnormal characteristic measurement of GaN Schottky junction UV detectors

Zongshun Liu,Degang Zhao,Jianjun Zhu,Shuming Zhang,xiaoming Shen,lihong Duan,Yanghui

DOI: https://doi.org/10.3321/j.issn:1002-0470.2005.10.013

2005-01-01

Abstract:Abnormal I-V curves of GaN Schottky junction UV detectors were measured when they were illuminated with and without UV light of different wavelengths. The currents of the detectors at no bias voltage and reverse bias voltage of 2 V were obtained when they were illuminated by light beams of 362 nm and 368 nm scanning across the active region of the detectors, respectively. Measurement results show that detectors at reverse bias voltage exhibit high gain with UV light beam illuminating the region near the edge transparent electrode and near the Schottky junction pad, and the spatial responsivity is non-uniformity. The detectors at reverse bias voltage exhibit high gain peak at 364 nm and 368 nm wavelength near the band edge. The high gain and persistent photoconductivity of the detector at reverse bias voltage can be quenched by 810 nm light illumination respectively(optical quenching). Electrons and holes captured by trap centers after illumination can be emitted by high reverse voltage aging. The dark current of the detector at low reverse voltage after high reverse voltage aging is less than that before aging.