An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Zhu Jian-Jun,Wang Hui,Zhang Shu-Ming,Yang Hui
DOI: https://doi.org/10.1088/0256-307x/26/5/058501
2009-01-01
Abstract:The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.
What problem does this paper attempt to address?