Abstract:Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the β‐Ga2O3 Schottky avalanche photodetector is fabricated and achieves a high responsivity of 9780.23 A W−1, an ultrahigh photo‐to‐dark current ratio of 1.88 × 107, and an ultrahigh gain of 106. The superior photoresponse performances ascribe to the effective carrier avalanche multiplication, which contributes to the high photocurrent, and the Schottky junction depletion, which leads to the low dark current. Solar‐blind photodetectors have attracted extensive attention due to their advantages such as ultra‐low background noise and all‐weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β‐Ga2O3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. The Schottky APD exhibits a high responsivity of 9780.23 A W−1, an ultrahigh photo‐to‐dark current ratio of 1.88 × 107, an external quantum efficiency of 4.77 × 106%, a specific detectivity of 9.48 × 1014 Jones, with an ultrahigh gain of 1 × 106 under 254 nm light illumination at 60 V reverse bias, indicating high application potential for solar‐blind imaging. The superior photoresponse performances ascribe to the effective carrier avalanche multiplication, which contributes to the high photocurrent, and the high quality Schottky junction depletion, which leads to the low dark current.

Low Dark Current GaN Schottky UV Photodiodes Using Oxidised IrNi Schottky Contact

Barrier-Height-Enhanced n-GaN Schottky Photodiodes Using a Thin p-GaN Surface Layer

Barrier-Height-Enhanced <i>n</i>-GaN Schottky Photodiodes Using a Thin <i>p</i>-GaN Surface Layer

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

A Study of Al0.3Ga0.7N Metal-semiconductor-metal UV Photodiodes

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

A Method for Fabricating Au/n-Al_(0.3)Ga_(0.7)N Lateral Schottky Diodes

Large Area GaN Schottky Photodiode with Low Leakage Current

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio

Aluminum gallium nitride ultraviolet photodiodes with buried p-layer structure

Back-Illuminated Gan Metal-Semiconductor-Metal Uv Photodetector with High Internal Gain

Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

External Quantum Efficiency of Pt/n-GaN Schottky Diodes in the Spectral Range 5–500Nm

Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN

High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.