Abstract:Transparent electronics is a burgeoning field with exciting potential for next‐generation "see‐through" devices. The creation of high‐performance fully‐transparent ultraviolet photodetectors is essential for enabling wearable and portable applications. In this study, we initially designed metal‐semiconductor‐metal (MSM) type AZO/GaN/AZO and ITO/GaN/ITO transparent ultraviolet photodetectors (PDs), utilizing Al‐doped ZnO (AZO) and indium tin oxide (ITO) transparent conductive electrodes. Our investigations revealed that AZO and ITO formed ohmic and Schottky contacts, respectively, with GaN. Subsequently, building on these findings, we developed a fully‐transparent Schottky barrier photodiode (SBPD) for ultraviolet photodetection using AZO/GaN/ITO. The SBPD displayed a high responsivity (R) of 1.41×103 A/W, a detectivity (D*) of 6.85×1014 Jones, and a photo‐to‐dark current ratio (PDCR) exceeding 1×104 at a ‐5 V bias. Furthermore, the SBPD demonstrated an ultra‐high responsivity of 1.18 A/W at 0 V bias, indicating its potential as a self‐powered device under extreme conditions. Our results demonstrate the tremendous potential of the high‐performance and fully‐transparent GaN‐based Schottky barrier photodiode for environmental monitoring, optical communication, military radar, and other fields. This article is protected by copyright. All rights reserved.

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