Abstract:Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive candidate for future radiation-hard detectors which do not require cooling. This paper investigates the radiation hardness of 4H-SiC p-in-n detectors irradiated up to $5\times 10^{15}$ $\text{n}_{\text{eq.}}/\text{cm}^2$ using UV-TCT. The samples have been operated in reverse and forward bias, which is possible due to the heavily decreased forward current after irradiation. Previous studies have already hinted at an excessive charge collection in forward bias, even exceeding a charge collection efficiency (CCE) of 100%. In this work, the excessive CCE in forward bias was shown to correlate heavily with the spatial profile of injected charge. For a sufficiently focused laser, the CCE starts to increase at high forward bias and even surpasses 100% instead of saturating as it does for a defocused laser beam. In reverse bias, the CCE was found to be independent of the beam spot size. For samples irradiated to high fluences ($\geq 1\times 10^{15}$ $\text{n}_{\text{eq.}}/\text{cm}^2$) the excessive CCE in forward bias is smaller and negligible at the highest fluences. Additionally, the CCE was observed to correlate to the rate of charge injection (laser pulses per second), with a logarithmic increase of the collected charge if a threshold of injected carrier density is exceeded. The mechanism of these effects is still an ongoing topic of study, however, the observations already pose implications for the accurate experimental characterization of irradiated SiC detectors.

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Study on Silicon Carbide (sic) Schottky Ultraviolet Photodetectors

Bidirectional Bias Response Ultraviolet Phototransistors With 4H-SiC NPN Multi-Layer Structure

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-Sic N-P-n Bipolar Phototransistor

Numerical and Analytical Study of 6H-Sic Detectors with High UV Performance

Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Abnormal characteristic measurement of GaN Schottky junction UV detectors

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A Study on the Spectral Response of Back-Illuminated P-I-n AlGaN Heterojunction Ultraviolet Photodetector

A 4H-Sic N-P-n Phototransistor with On-Line Temperature Monitoring Characteristic

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Study of the characteristics of an irradiated 4H-SiC charge particle detector

The Excellent Performance of Β-Ga2o3 Schottky Photodiode under Forward Bias and Its Application in Solar-Blind Ultraviolet Communication

Reach-Through-Collector Based 4H-SiC Phototransistor enabling nW/cm 2 UV Detection