Abstract:In this study, the doping of deep‐level element sulfur (S) is synergized with the device architecture incorporating a blocked impurity band (BIB) to fabricate an advanced infrared detector. The S‐doped Si (Si:S) BIB detector exhibited excellent short‐wave infrared detection performance. The multi‐scenario application demonstrations further confirmed its potential for practical use. Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding their photoresponse into the short‐wavelength‐infrared region beyond 1.1 μm remains challenging because of the intrinsic bandgap of Si. In this study, an ion implantation sulfur‐doped Si‐based infrared photodetector featuring a blocked impurity band (BIB) structure is investigated. The detector achieves an extended sub‐bandgap infrared response up to 2 μm through impurity band transitions, facilitated by the artificial creation of a deep‐level impurity band within the Si bandgap. The device exhibited a competitive photodetection effect with a high responsivity of 107.3 mA W−1 and an external quantum efficiency of 10.2%. Notably, the detector yielded an enhanced response speed with a raising time of 46 μs and a decay time of 135 μs at 1310 nm under room temperature. Finally, the versatile applications of this detector is presented in a multitude of scenarios encompassing material composition identification, multi‐band imaging, and optical communication. The proposed investigation not only proposed a method for Si‐based infrared detectors but also constituted a contribution to the advancement of silicon photonics.

A 4H-Sic N-P-n Phototransistor with On-Line Temperature Monitoring Characteristic

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

High-Temperature Performance of the 4H-Sic N-P-n Bipolar UV Phototransistor

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-Sic N-P-n Bipolar Phototransistor

Bidirectional Bias Response Ultraviolet Phototransistors With 4H-SiC NPN Multi-Layer Structure

Reach-Through-Collector Based 4H-Sic Phototransistor Enabling Nw/cm2 UV Detection

Reach-Through-Collector Based 4H-SiC Phototransistor enabling nW/cm 2 UV Detection

A Highly Sensitive Filterless Narrowband 4H-Sic Photodetector Employing a Charge Narrowing Strategy

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

Demonstration of the First 4 H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector

Visible-Blind Photodetector Based on P-I-n Junction 4H-Sic Vertical Nanocone Array

Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity

Optical Temperature Sensor Based on Polysilicon Waveguides

A Study on the Gain Performance of SiC Ultraviolet Photodetectors at High Reverse Biased Voltage

Study on Silicon Carbide (sic) Schottky Ultraviolet Photodetectors

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

Towards the Fabrication and Measurement of High Sensitivity Sic-Uv Detectors with Oxide Ramp Termination

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction