Abstract:Au/n-4H-SiC Schottky ultraviolet photodetectors are fabricated using wide band semiconductor n-4H-SiC and metal Au as Schottky contact and ohmic contact of Ti, Ni, Ag alloys on the back side. The spectrum response characteristics at high temperature and high reverse biased voltage of the devices are measured and analyzed. The response wavelength range is between 200 and 400 nm. At room temperature without biased voltage, the response peak is found at 320 nm and the half width of response wavelength is 82 nm. The spectrum response and cut-off velocity of the detectors increase sharply at high reverse biased voltage (above one hundred voltage). And the spectrum response curves are very plain between 260 and 380 nm. At 533 K without biased voltage, ultraviolet response characteristics of the device remain very well.

High Quality Ultraviolet Photodetectors Based on Silicon Carbide