Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

H Evolution from Nano-Crystalline Silicon-Comparison of Simulation and Experiment

Simulation of hydrogen evolution from nano-crystalline silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Microcrystalline And Nanocrystalline Silicon: Simulation Of Material Properties

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Structure and Simulation of Hydrogenated Nanocrystalline Silicon

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Structural Nature of Nanocrystalline Silicon

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Thermally Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon: A Combined Spectroscopic and Molecular Dynamics Simulation Investigation.

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Nanoindentation-Induced Phase Transformation in Silicon

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3