Abstract:<p>The effects of geometric and thermal properties of multilayer nominal three-dimensional chip on the temperature hotspots are investigated in this work. Based on heat-transfer computational fluid dynamic analysis, various effective parameters which correlate with reducing the hotspot temperature are studied. A new analytical method for the equivalent thermal conductivity of the thermal interface material (TIM) layer and the chip layer structure in the multilayer chip is proposed, the deviation between the present results and the prior literature is less than 2%. For different chip structures and through silicon vias (TSV) arrangements, the higher the number of multi-layer chips subject to a low Reynolds number, the higher the hotspot temperature. The hotspot temperature gradually decreases linearly with an increase in the Reynolds number. For a convective cooling environment, comparing the two cases with and without the TSV, the variation of Nusselt number for the chip package surface facing the coolant is less than 1. The staggered core structure has a lower hotspot temperature for the no TSV case. When the Core-Centralized TSV is introduced, the overlapping core structure influences the internal heat dissipation the most. When the Reynolds number increases to 2000 and the number of chip layers is greater than 10, the hotspot temperature is almost insensitive to the chip layer and the hotspot temperature difference among different multilayer 3D chips does not exceed 0.2%. The layer where the hotspot temperature exists is different for different TSV arrangements.</p>

Temperature Rise in Low-K ULSI Interconnects

Temperature Simulation of ULSI Interconnects Based on 45 nm Technology

A Novel Analytical Thermal Model for Temperature Estimation of Multilevel ULSI Interconnects

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Thermal Stress Analysis for the Low-k Dielectric Layers of Cu Interconnects in a 45 nm Chip

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Thermal-aware electrical analysis of high-speed interconnect

Thermal Stress Analysis of the Low-K Layer in a Flip-Chip Package

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

Analytical Thermal Analysis of On-chip Interconnects

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

Fractures of Ultra-Low-k Material in a Chip During a Flip-Chip Process

Analysis and Optimization of Thermal-Driven Global Interconnects in Nanometer Design

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Analysis of hotspots and cooling strategy for multilayer three-dimensional integrated circuits

Stress Modeling for the Impacts of Flip Chip Process on the Ultralow-K Chips

Physical Modeling And Simulation Of Thermal Heating In Vertical Integrated Circuits

Analytical Multistage Thermal Model for FEOL Reliability Considering Self-and Mutual-Heating