Physical Modeling And Simulation Of Thermal Heating In Vertical Integrated Circuits

Abderrazzak El Boukili
DOI: https://doi.org/10.48550/arXiv.1305.3249
2013-05-14
Abstract:Interconnect is one of the main performance determinant of modern integrated circuits (ICs). The new technology of vertical ICs places circuit blocks in the vertical dimension in addition to the conventional horizontal plane. Compared to the planar ICs, vertical ICs have shorter latencies as well as lower power consumption due to shorter wires. This also increases speed, improves performances and adds to ICs density. The benefits of vertical ICs increase as we stack more dies, due to successive reductions in wire lengths. However, as we stack more dies, the lattice self-heating becomes a challenging and critical issue due to the difficulty in cooling down the layers away from the heat sink. In this paper, we provide a quantitative electro-thermal analysis of the temperature rise due to stacking. Mathematical models based on steady state non-isothermal drift-diffusion transport equations coupled to heat flow equation are used. These physically based models and the different heat sources in semiconductor devices will be presented and discussed. Three dimensional numerical results did show that, compared to the planar ICs, the vertical ICs with 2-die technology increase the maximum temperature by 17 Kelvin in the die away from the heat sink. These numerical results will also be presented and analyzed for a typical 2-die structure of complementary metal oxide semiconductor (CMOS) transistors.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the self - heating effect on vertical integrated circuits and its impact on circuit performance. Specifically, as the number of stacked chip layers in vertical integrated circuits (3D ICs) increases, the heat dissipation problem between layers far from the heat sink becomes particularly prominent, leading to a temperature rise, which in turn affects the performance and reliability of the circuit. ### Main problem summary: 1. **Self - heating effect**: As more chip layers are stacked, the self - heating effect becomes a key issue because the layers far from the heat sink are difficult to dissipate heat effectively. 2. **Impact of temperature rise on performance**: High temperatures will limit the performance of semiconductor devices, such as high - power laser diodes, high - power transistors, high - electron - mobility transistors (HEMTs) and CMOS transistors. 3. **Modeling and simulation requirements**: It is necessary to establish accurate electro - thermal models to quantitatively analyze the causes and effects of temperature rise, and verify these models through numerical simulation. ### Solutions: The author proposes a mathematical model based on the coupling of the steady - state non - isothermal drift - diffusion transport equation and the heat flow equation to quantify the temperature rise caused by stacking. Specifically, it includes the following aspects: 1. **Physical basic models**: - **Poisson equation**: Describes the change in electrostatic potential. - **Carrier transport equations**: Describe the transport of electrons and holes. - **Lattice heat flow equation**: Describes the transfer of heat in the lattice. 2. **Heat source modeling**: - **Joule heat**: The heat generated when current passes through semiconductor materials. - **Recombination heat**: The heat generated by electron - hole pair recombination. - **Thomson and Peltier effects**: Heat related to thermoelectric effects. - **Optical absorption heat**: The energy absorbed when light waves penetrate materials. 3. **Numerical methods**: - Use the finite - volume method to approximate strongly coupled non - linear equations. - Use the Newton - Raphson algorithm for linearization and decoupling. - Use LU decomposition or multi - frontal LU decomposition to solve linear systems. - Adopt advanced meshing algorithms and parallel computing techniques. ### Results and analysis: Through 3D numerical simulation of a typical double - layer CMOS structure, the results show that in the layers far from the heat sink, the maximum temperature has increased by 17 Kelvin. This indicates that although vertical ICs have the advantages of shortening wire lengths, reducing power consumption and increasing speed, the self - heating effect is still a problem that cannot be ignored. ### Conclusion: This research provides important theoretical and numerical bases for understanding and solving the self - heating problem in vertical integrated circuits, which is helpful for further optimizing 3D IC design and improving its performance and reliability.