Temperature Simulation of ULSI Interconnects Based on 45 nm Technology

WANG Xi-ming,ZHOU Jia,RUAN Gang
2007-01-01
Abstract:Temperature rise in three 9-layered ULSI interconnects based on 45 nm technology was analyzed using self-developed compact quasi-analytic model.Compared with results from ANSYS,the error of our model reaches 7.7%.It can be concluded that,among the three structures,Structure III,which has the lowest temperature rise and smallest temperature change with the increase of substrate temperature and the decrease of thermal conductivity kt,has the best heat transfer capability,while Structure II the worst and Structure I in between.Thick interlayer is the main cause of the severely rugged heat transfer conditions.To achieve good heat transfer and small RC delay,optimized interlayer thickness should be found after thermal and electrical simulation.It is revealed that temperature rise decays in second-order exponential with the decrease of kt.And new technology strategies should be needed for kt<0.1 W/℃·m.
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