Step growth of a primary silicon crystal observed by decantation during centrifugal casting

Qudong Wang,Wenjiang Ding,JunZe Jin
DOI: https://doi.org/10.1179/026708399101506724
IF: 1.8
2013-01-01
Materials Science and Technology
Abstract:A new method of decantation during centrifugal casting has been used to study; crystal growth. The shape of a primary silicon crystal grown from a hypereutectic Al-Si alloy was obtained by means of this method and a growth mechanism depending on the use of dislocation steps was found to apply for primary silicon crystals. Furthermore a mechanism for the branching of primary silicon crystals and the development of a structure of alpha-Al-Si eutectic encapsulated in primary silicon crystal was successfully explained by the growth mechanism of the primary silicon crystal. A growth process leading to the alpha-Al-Si eutectic surrounding the primary silicon crystal was also observed.
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