Abstract:Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re-2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re-2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re-2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re-2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re-2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.

Diameter-Controlled Czochralski Growth of Silicon Crystals

Solidification Interface Shape Control in a Continuous Czochralski Silicon Growth System

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

A Novel Method For Melt Flow Control And Inclusion Suppression In Optical Crystal Growth

Control Of Flow Pattern And Solidification Interface Shape In An Induction Heated Czochralski Crystal Growth System

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth Processes

Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Effects of Pulling Velocity on Interface Dynamics and Solute Segregation During Crystal Growth

Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth by optimized heating zone with dual side-heaters

Numerical study of continuous Czochralski (CCz) silicon single crystal growth in a double-side heater

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth