Abstract:<p>Czochralski (Cz) silicon single crystal growth process is a large delay, nonlinear dynamic time-varying system with complex physicochemical reactions, multi-field and multi-phase coupling, and its modeling and control has always been a problem in the automatic control field. In this paper, a hybrid modeling method based on the data-driven model and mechanism model is proposed, and applied to the Cz silicon crystal growth process modeling. Firstly, to simplify the model complexity and improve the model accuracy, the crystal growth process model is divided into the energy transfer model and a hydrodynamic and geometric model. Here, a Hammerstein–Wiener model based on a long short-term memory network (LSTM-Hammerstein–Wiener) is established for the energy transfer process with multiple heat transfer links and hysteresis effect. Further, a novel robust LSTM-Hammerstein–Wiener model is proposed by introducing the M-estimation method, which avoids the effect of the outliers on model robustness. Secondly, the proposed robust LSTM-Hammerstein–Wiener is combined with the hydrodynamic and geometric model to obtain the hybrid model between the heater power and the crystal diameter. Meanwhile, the crystal diameter error compensation model is established to reduce the unmodeled dynamics of the mechanism model, thereby improving the accuracy of the hybrid model. Besides, the proposed hybrid model is applied to the model-free adaptive control of silicon single crystal diameter. Finally, various data experiment results based on actual operating data verify the effectiveness of the proposed hybrid model.</p>

Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Diameter-Controlled Czochralski Growth of Silicon Crystals

A Model for Dopant Concentration in Czochralski Silicon Melts

Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field

Modeling and application of Czochralski silicon single crystal growth process using hybrid model of data-driven and mechanism-based methodologies

Computer modeling of crystal growth of silicon for solar cells

A reduced moment-based model for oxygen precipitation in silicon

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Comprehensive model for charge carrier recombination in Czochralski‐grown silicon due to oxygen precipitation in industrial solar cell manufacturing

Control of oxygen transport in the melt of a czochralski-silicon crystal growth

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Modeling and Simulation of Si Crystal Growth from Melt

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals

Global Simulation of Coupled Oxygen and Carbon Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots: Effect of Crucible Cover Coating

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

A Hydrodynamics Model of Silicon Carbide Single Crystal Growth by PVT and Finite Element Analysis

Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth