Abstract:The Continuous Czochralski (CCZ) is a promising approach for preparing low-cost high-quality monocrystalline silicon in the photovoltaic field. To investigate the coupled mechanism of silicon particles melting/migration and melt turbulent heat transfer during the CCZ monocrystalline silicon growth, based on the Euler–Lagrange framework, a three-dimensional transient heat-mass transfer model is developed using the LES method considering the heat exchange between the silicon particles and the silicon melt as well as the particles size change. In addition, we investigated the effects of key silicon particle parameters such as feeding temperature, particle size and feeding speed, on the silicon particles melting/migration and melt turbulent heat transfer. The results show that appropriately increasing the feeding temperature and speed contributes to achieve more concentrated particles distribution and weaken the movement of silicon particles towards the crystalline interface simultaneously, which conduce to eliminate the adverse impact of continuous feeding on monocrystalline silicon growth. And the feeding temperature has a great effect on the temperature fluctuation near the crystalline interface. In addition, when the feeding speed exceeds 1.5m/s, increasing feeding speed has no significant effect on the particles distribution and melting process. Besides, the feeding particle size has a significant effect on the maximum penetration depth of particles. The small silicon particles prefer moving to the crystalline interface driven by thermophoretic force, which is detrimental to the high-quality CCZ monocrystalline silicon growth.

Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation

Comparison and application of several turbulence models in simulation of crystal growth

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

Modeling and Simulation of Si Crystal Growth from Melt

Numerical simulation of combined flow in Czochralski crystal growth

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

Computer modeling of crystal growth of silicon for solar cells

Numerical Simulation of Unsteady Flows in Czochralski Crystal Growth by Lattice Boltzmann Methods

Liquid to Crystal Si Growth Simulation Using Machine Learning Force Field

Melt Convection and Temperature Distribution in 300 Mm Czochralski Crystal Growth with Transverse Magnetic Field

Extended Hypothesis for Reynolds Stress Tensor and Turbulent Heat Flux Modeling Within a Novel K‐ε Model for Prediction of Crystal Growth from the Melt

Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth

Numerical modelling of melting front structures during floating zone silicon crystal growth

Monte-carlo modeling for grain growth process in Vapor-Liquid-Solid phase sintered materials

Three-dimensional thermosolutal simulation of dendritic and eutectic growth

Numerical Analysis of Solid–liquid Interface Shape During Large-Size Single Crystalline Silicon with Czochralski Method

Influence of particle parameters on the melting/migration of silicon particles and turbulent heat transfer during CCZ monocrystalline silicon growth

Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method