Abstract:Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re-2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re-2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re-2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re-2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re-2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.

Numerical simulation of combined flow in Czochralski crystal growth

Numerical Simulation of Unsteady Flows in Czochralski Crystal Growth by Lattice Boltzmann Methods

The Numerical Study of Marangoni Flow and Its Stability in Czochralski Crystal Growth

Numerical Analysis of the Micro-Couette Flow Using a Non-Newton–fourier Model with Enhanced Wall Boundary Conditions

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

Numerical Simulation of Hypersonic Reaction Flows with Nonlinear Coupled Constitutive Relations

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

A Novel Method For Melt Flow Control And Inclusion Suppression In Optical Crystal Growth

Comparison and application of several turbulence models in simulation of crystal growth

A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth Processes

Modeling of crystal growth with density change induced flows by the anisotropic lattice Boltzmann scheme

Control Of Flow Pattern And Solidification Interface Shape In An Induction Heated Czochralski Crystal Growth System

Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation

Numerical modeling of faceted crystal growth using a lattice Boltzmann-phase field model with a new interfacial energy function

Fundamental Study of Crystal/melt Interface Shape Change in Czochralski Crystal Growth

Numerical Simulation of the Melting of Solid Particles in Thermal Convection with a Modified Immersed Boundary Method

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Modelling of Heat Transfer in Single Crystal Growth

Simulation of Single Crystal Growth: Heat and Mass Transfer

Diameter-Controlled Czochralski Growth of Silicon Crystals