Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Comparison and application of several turbulence models in simulation of crystal growth

Prediction of melt-crystal interface shape and melt convection in a large-scale CZ-Si growth system using RANS and LES methods in global simulation

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

Numerical simulation of combined flow in Czochralski crystal growth

Numerical Simulation of Unsteady Flows in Czochralski Crystal Growth by Lattice Boltzmann Methods

Modelling of Heat Transfer in Single Crystal Growth

A Volume Radiation Heat Transfer Model for Czochralski Crystal Growth Processes

Extended Hypothesis for Reynolds Stress Tensor and Turbulent Heat Flux Modeling Within a Novel K‐ε Model for Prediction of Crystal Growth from the Melt

Simulation of Single Crystal Growth: Heat and Mass Transfer

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

Monte-carlo modeling for grain growth process in Vapor-Liquid-Solid phase sintered materials

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Monte-Carlo simulation of grain growth in Vapor-Liquid-Solid phase sintered material

Monte-Carlo simulation of isotropic and anisotropic grain growth in liquid phase sintered ceramics

Local and Global Simulations of Bridgman and Liquid-Encapsulated Czochralski Crystal Growth

Liquid to Crystal Si Growth Simulation Using Machine Learning Force Field

Effect of crystal rotation on the instability of thermocapillary–buoyancy convection in a Czochralski model

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Numerical modelling of melting front structures during floating zone silicon crystal growth

Comparison of different turbulence models in computation of co-axial jet stream of Texaco gasifier