Abstract:This study delves into temperature‐ and carrier‐dependent surface recombination at silicon/dielectric interfaces within the 25–90 °C range, employing an advanced technique. This approach offers many unique capabilities, notably separating chemical passivation and charge‐assisted population control and extracting fixed charges in the dielectric layers, the bulk lifetime, and the temperature‐dependent capture cross sections of electrons and holes. Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature‐ and carrier‐dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge‐assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.

Comprehensive model for charge carrier recombination in Czochralski‐grown silicon due to oxygen precipitation in industrial solar cell manufacturing

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Effect of Oxygen Precipitation on the Performance of Czochralski Silicon Solar Cells

Oxygen Annealing Behavior in Multicrystalline Silicon

A reduced moment-based model for oxygen precipitation in silicon

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

A comprehensive model of high-concentration phosphorus diffusion in silicon

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Separated striations in n-type Czochralski silicon solar cells

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Investigation of Oxygen Precipitation Behavior in Nitrogen-doped Czochralski Silicon Used for Solar Cells

An improved model for describing the net carrier recombination rate in semiconductor devices