Study on optical emission spectrum of RF plasma during amorphous silicon based film etching

ChangAn Wang,ChongYang Xu,Bofang Zhao,Tianhong Yu

1997-01-01

Abstract:The coherent detection technique with a lock-in amplifier and the detection system for RF plasma optical emission spectrum was studied. This spectrum during amorphous silicon based film etching in CF4 gas was detected. The detecting results and etching mechanism were analyzed.

What problem does this paper attempt to address?

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

X. D. Pi,R. W. Liptak,S. A. Campbell,U. Kortshagen

DOI: https://doi.org/10.1063/1.2773931

IF: 4

2007-01-01

Applied Physics Letters

Abstract:C F 4 -based plasma has been employed to in-flight etch silicon nanocrystals (Si-NCs) after they are synthesized by SiH4-based plasma. The authors find that the photoluminescence (PL) of Si-NCs blueshifts when they are etched, indicating the etching-induced size reduction of Si-NCs. It is demonstrated that the power of CF4-based plasma can be tuned to control the size reduction of Si-NCs. The room-temperature atmospheric oxidation of both etched Si-NCs and unetched ones slows down significantly ∼100h after production. The PL intensity of etched Si-NCs is smaller than that of unetched ones after oxidation.
Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Y. Tzeng,T. H. Lin

DOI: https://doi.org/10.1149/1.2100875

IF: 3.9

1987-09-01

Journal of The Electrochemical Society

Abstract:Dry etching of silicon using a radio frequency glow discharge in SF6+N2O and SF6+O2 gas mixtures have been studied. Both N2O and O2 additives can significantly enhance the silicon etch rate. For low RF power, the same amount of N2O enhances silicon etch rate more than O2 does. When the RF power level is increased beyond a value, O3 becomes more efficient in enhancing the silicon etch rate. The chemisorption model based on the competition between atomic fluorine and oxygen species for active silicon etching sites is applied to explain these etching characteristics. Optical emission spectroscopy is used to measure the relative concentrations of atomic oxygen and fluorine, which are subsequently applied to correlate the silicon etch rates. According to XPS characterization, there is no detectable sulfur contamination on silicon surface after being etched by either plasma.

electrochemistry,materials science, coatings & films
Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in Cf4 Plasma

CL Shao,S Morita,T Soga,R Inanami,S Hattori

DOI: https://doi.org/10.1143/jjap.35.765

1996-01-01

Abstract:Carbonous film was deposited on silicon wafer in CF4plasma when the silicon wafer was irradiated by synchrotron radiation (SR). The deposition rate was 183 Å/min at a SR intensity of 1.43 W/cm2, DC discharge voltage of 700 V, discharge current of 6 mA and CF4gas pressure of 0.13 Torr. The film was characterized by Auger electron spectroscopy. The deposition mechanism of the film was due to photoexcitation of the silicon surface by SR irradiation.
A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Hou GuoFu,Xue JunMing,Yuan YuJie,Sun Jian,Zhao Ying,Geng XinHua

DOI: https://doi.org/10.1007/s11433-007-0074-2

2007-01-01

Abstract:A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.
Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Nomin Lim,Yeon Sik Choi,Alexander Efremov,Kwang-Ho Kwon

DOI: https://doi.org/10.3390/ma14071595

IF: 3.4

2021-03-24

Materials

Abstract:This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching

Wan Soo Song,Ju Eun Kang,Sang Jeen Hong

DOI: https://doi.org/10.3390/coatings12081064

IF: 3.236

2022-07-28

Coatings

Abstract:Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry etching based on optical emission spectroscopy (OES) are lacking; in particular, no study has reported the use of OES for analyzing N2-mixed CF4/O2 plasma. Thus, this study demonstrates an OES-based approach for analyzing a mixed-gas plasma for etching Si3N4 thin films. The state of each single gas plasma of CF4, O2, and N2 as well as that of mixed plasmas of heterogeneous gases CF4/O2, CF4/N2, and O2/N2 was investigated to analyze the mixed-gas plasma. Furthermore, the amount of N2 in the CF4/O2 plasma varied from 0 to 8 sccm. The relationship between the OES analysis results and the Si3N4 etch rate was subsequently established using Si3N4 film etching, and the explanation was verified through a chemical reaction modeling and surface reaction. Therefore, our study confirmed the alteration in chemical species and quantity that occurred when N2 was added to CF4/O2 plasma and the effect of the alteration on Si3N4 etch.

materials science, multidisciplinary,physics, applied, coatings & films
The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Juncao Bian,Zhe Li,Haiyan He,Xiwen Zhang,Jiang Lin,Qian Gao,Zhongdong Chen,Gaorong Han

DOI: https://doi.org/10.1088/1742-6596/276/1/012156

2011-01-01

Journal of Physics Conference Series

Abstract:A series of carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were prepared at different radio frequency (RF) powers from silane-ethylene-hydrogen plasma. The effect of the RF power on the bonding configurations and microstructures has been investigated. The grown films were characterized by a collection of techniques including Scanning Electron Microscope, Fourier transform infrared(FTIR) spectroscopy, Raman scattering and photoluminescence spectroscopy. The deposition rate increases upon RF power due to the enhancement of chemical reactivity of plasma. The carbon to silicon ratio increases, for more C(2)H(4) molecules decompose with the enhancement of RF power and more carbon atoms are bonded into the films. Raman G peak position shifts to a higher wavenumber, which indicates that the size and concentration of sp(2) carbon clusters increase as the RF power becomes stronger. Blue-green photoluminescence is detected at room temperature. The PL band can be attributed to the existence of the amorphous carbon clusters in films with high carbon concentrations.
Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

X D Pi,R W Liptak,J Deneen Nowak,N P Wells,C B Carter,S A Campbell,U Kortshagen

DOI: https://doi.org/10.1088/0957-4484/19/24/245603

IF: 3.5

2008-01-01

Nanotechnology

Abstract:A novel dual-plasma system has been developed to combine the synthesis of silicon nanocrystals ( Si-NCs), the etching to controllably tailor the Si-NC size, and the surface functionalization of Si-NCs into one simple all-gas-phase process. Si-NCs are synthesized in SiH4-based plasma; they then travel through CF4-based plasma, where Si-NCs are etched and passivated by C and F. The resulting Si-NCs exhibit air-stable emission across the full visible spectrum. Structural and optical characterization indicates that the emission in the red-to-green range is based on the recombination of quantum-confined excitons in Si-NCs, while the blue emission originates from defect states. The quantum yields of stabilized photoluminescence from Si-NCs range from 16% at the red end to 1% at the blue end.
Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

He Zhang,Xiaodan Zhang,Changchun Wei,Jian Sun,Xinhua Geng,Shaozhen Xiong,Ying Zhao

DOI: https://doi.org/10.1016/j.tsf.2011.04.166

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:We applied ex situ spectroscopic ellipsometry (SE) on silicon thin films across the a-Si:H/μc-Si:H transition deposited using different hydrogen dilutions at a high pressure by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). The optical models were based on effective medium approximation (EMA) and effective to estimate the thickness of the amorphous incubation layer and the volume fractions of amorphous, microcrystalline phase and void in μc-Si:H thin films. We obtained an acceptable data fit and the SE results were consistent with that from Raman spectroscopy and atomic force microscopy (AFM). We found a thick incubation layer in μc-Si:H thin films deposited at a high rate of ~5Å/s and this microstructure strongly affected their conductivity.
Investigation on RF styrene plasma by emission spectroscopy

Meng Chen,Tsin-chi Yang,Zhenguo Ma

DOI: https://doi.org/10.1109/27.376580

IF: 1.368

1995-04-01

IEEE Transactions on Plasma Science

Abstract:In order to gain an insight into the processes in an RF styrene plasma, gas phase plasmas were investigated by emission spectroscopy. The plasma reactor was a bell-jar-type chamber with two parallel plate electrodes. The measurement of plasma emission spectra was made with axial resolution. The correlations among the emission intensities of CH and C/sub 4/H/sub 2//sup +/ species, the polymer deposition rate and the polymeric structure of the deposited films were studied. The proposed analysis showed that the gas flow pattern in the plasma reactor, and the difference in collisions between styrene monomer molecules and energetic free electrons occurring in the plasma region and RF sheath, made the fragments and ions produced change in the different regions, resulting in a change in polymeric structure and deposition rate of the polymer films. With increasing distance between the substrate position and the lower electrode, the deposition rate and the concentration of phenyl groups both at the polymer surface and in the bulk decreased.<>

physics, fluids & plasmas
THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Feng Zhu,Ying Zhao,Changchun Wei,Jian Sun,Yan Wang,Hong Song,Xinhua Geng

DOI: https://doi.org/10.3321/j.issn:0254-0096.2005.05.005

2005-01-01

Abstract:The microcrystalline silicon thin film materials were deposited by RF-PECVD technology at high plasma power and low substrate temperature. Measuring the optical emission spectroscopy (OES) could analyze the resultants in plasma. From OES' analysis, the effect of resultants in plasma on growth of microcrystalline silicon was known. The intensity of SiH*, H β*, H α* and H 2* in plasma increase slowly with silane concentration increasing, whereas the ration of H α*/SiH* monotonously is decreased H a* increases quickly, SiH*, H β* and H 2* being saturation, and H α*/SiH* monotonously increases with plasma power increasing. The brightness of plasma mainly depended on the intensity of SiH*, H β* and H 2* in plasma.
Electron Field Emission Studies from Amorphous Carbon Thin Films

SRP Silva,RD Forrest,DA Munindradasa,GAJ Amaratunga

DOI: https://doi.org/10.1016/s0925-9635(97)00292-6

IF: 3.806

1998-01-01

Diamond and Related Materials

Abstract:One of the largest potential applications for amorphous carbon (a-C) thin films is in electron field emitting devices. We have deposited hydrogenated a-C (a-C:H) thin films on silicon substrates as a function of self-bias and pressure using a standard capacitively coupled RF PECVD system. Emission of electrons is observed at threshold fields as low as 6 V μm−1 after conditioning. The threshold field at which the electron emission takes place does not seem to vary in a systematic manner as a function of self-bias but shows a minimum threshold for the a-C:H film with the highest sp3 content. We have explained the electron emission that occurs in these films as being due to a space charge effects caused by band bending in the films, with the a-C:H film acting as a space charge interlayer with the true cathode being the silicon. We have also conducted lifetime tests. Following our previous work on nitrogen-doped a-C:H films [1], we report the characteristics observed for undoped a-C films.
Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

Chuankun Han,Yiyong Yang,Weifeng Liu,Yijia Lu,Jia Cheng

DOI: https://doi.org/10.1142/s2010324718500029

2018-01-01

SPIN

Abstract:Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing, especially in nanoscale etching and deposition process. It is important to understand the relationship among the 13.56[Formula: see text]MHz rf-biased power and the etching process. In this study, the effect of dual rf power on the SiO2 sputter etching is investigated by measuring the ion energy distributions (IEDs), ion flux and sputter etching rate. The results show that the IEDs transforms from uni-modal towards bi-modal distribution when rf-biased power is applied to electrode. The influence of source power, bias power, discharge pressure and current ratio on the ion flux, IEDs are investigated in detail. The energy separations measured by RFEA are in good agreement with analytical model. The ion flux can be modulated by the 13.56[Formula: see text]MHz rf-biased power. Moreover, the coil current ratio expands the control window of the ion bombardment energy for the ICP etch equipment while. Finally, an ion-enhanced etching model is introduced to obtain the sputter etching rate and reveals the influence of discharge conditions on the etch rate.
Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Zhihong Liu,Hui Zhang,Lei Wang,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2007.07.006

2008-01-01

Abstract:A novel hydrofluoric acid (HF) free atmospheric pressure chemical vapor deposition (APCVD) method has been developed to synthesize macropores on silicon. Field emission scanning electron microscopy (FESEM), X-ray powder diffraction (XRD) and energy-dispersive X-ray (EDX) spectrum indicate that the composition of macropores with the diameters of several hundred nanometers is silica. Moreover, the mechanism of the formation of the macropores has been preliminarily discussed. The photoluminescence (PL) spectrum of the macropores shows a broad violet emission band with the peak position at 402nm, which is related with the defects of silica.
Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Chunlin Shao

DOI: https://doi.org/10.1149/1.1837345

IF: 3.9

1996-01-01

Journal of The Electrochemical Society

Abstract:A new etching method, synchrotron-radiation-excited etching of a silicon wafer enhanced with a disk-shaped sheet CF4 plasma is proposed. The synchrotron radiation was incident perpendicularly on a silicon wafer which was placed on the downstream side of a CF4 plasma, and exposed simultaneously to the disk-shaped CF, plasma. Etching of the silicon wafer was enhanced when the silicon wafer was kept at a negative bias voltage. The etch rate increased linearly with increasingly negative bias voltage up to the -300 V. Using the new etching method, a fine pattern of 0.125 mu m lines has been successfully fabricated. The characteristics of the disk-shaped sheet CF4 plasma used in the experiments were investigated in detail. The amount of species contributing to the etching process generated by the disk-shaped plasma can be controlled by adjusting the distance between the edge of the disk-shaped plasma and the silicon surface; The etching mechanism Is discussed.
Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

X. D. Pi,L. Mangolini,S. A. Campbell,U. Kortshagen

DOI: https://doi.org/10.1103/physrevb.75.085423

IF: 3.7

2007-01-01

Physical Review B

Abstract:The effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic resonance spectroscopy. After the HF etching, the surface of Si-NCs is found to be H terminated. The HF etching also restructures the surface of Si-NCs. This leads to a decrease in the incorporation of O during subsequent oxidation, which finally results in silicon suboxide SiO1.9. In contrast, without the HF etching stoichiometric SiO2 is formed. A smaller ratio of O to Si in the silicon oxide results in a higher density of defects. This contributes to a more significant oxidation-induced decrease in the intensity of photoluminescence from Si-NCs after the HF etching than without the HF etching.
Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

Tae Hyung Kim,M. Jeon,G. Yeom,Nam Hun Kim

DOI: https://doi.org/10.1166/JNN.2015.11488

2015-11-01

Journal of Nanoscience and Nanotechnology

Abstract:The characteristics of embedded pulse plasma using 60 MHz radio frequency as the source power and 2 MHz radio frequency as the bias power were investigated for the etching of SiO2 masked with an amorphous carbon layer (ACL) using an Ar/C4F8/O2 gas mixture. Especially, the effects of the different pulse duty ratio of the embedded dual-frequency pulsing between source power and bias power on the characteristics on the plasma and SiO2 etching were investigated. The experiment was conducted by varying the source duty percentage from 90 to 30% while bias duty percentage was fixed at 50%. Among the different duty ratios, the source duty percentage of 60% with the bias duty percentage of 50% exhibited the best results in terms of etch profile and etch selectivity. The change of the etch characteristics by varying the duty ratios between the source power and bias power was believed to be related to the different characteristics of gas dissociation, fluorocarbon passivation, and ion bombardment observed during the different source/bias pulse on/off combinations. In addition, the instantaneous high electron temperature peak observed during each initiation of the source pulse-on period appeared to affect the etch characteristics by significant gas dissociation. The optimum point for the SiO2 etching with the source/bias pulsed dual-frequency capacitively coupled plasma system was obtained by avoiding this instant high electron temperature peak while both the source power and bias power were pulsed almost together, therefore, by an embedded RF pulsing.

Engineering,Medicine,Materials Science,Physics
Mass spectrometric study of plasma etching

Bruce A. Raby

DOI: https://doi.org/10.1116/1.569479

1978-03-01

Journal of Vacuum Science and Technology

Abstract:A quadrupole mass spectrometer gives much useful information about plasma etching processes on silicon and its compounds. The present work confirms some of the known or postulated chemistry in the plasma and raises further questions about the understanding of the process. The instrument enables dynamic optimization of process parameters and provides a variety of diagnostic information. In particular, it allows the detection of etching endpoints and thereby provides a sensitive technique for controlling the etching process. The technique appears to substantially reduce or eliminate the need for calibration. The account discusses endpoints for polycrytalline silicon, silicon dioxide, silicon nitride, and some cases involving photoresist.
Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Priyanka Arora,Junghyun Cho,Rafael Cervantes,Vincent M. Donnelly

DOI: https://doi.org/10.1116/6.0000373

2020-12-01

Abstract:In situ, real-time characterization of surfaces exposed to plasmas is of great interest. Common chemical analysis methods such as x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy cannot be used. Here, we discuss the use of glow discharge-optical emission spectroscopy for this purpose. A small coupon piece (aluminum coated with yttria in this study) was mounted on an rf-biased electrode and inserted into an opening in the reactor wall. Silicon or SiO2 substrates on a separately rf-biased electrode were etched in an inductively coupled plasma (ICP) of Cl2/Ar/O2 or C4F8/O2, respectively. Pulsed bias was applied to sputter the surface of the coupon piece in the wall at the edge of the ICP, either after etching in an Ar ICP or during etching in the Cl2/Ar/O2 ICP. Optical emission from the region above the coupon surface was collected and spectrally resolved. The difference in intensity between the coupon bias on and off conditions was used to determine what species were present on the surface. A quantification method for converting emission intensities into atomic composition depth profiles is presented.

physics, applied,materials science, coatings & films
Simulation of SiO2 etching in an inductively coupled CF4 plasma

Xu Qing,Li Yu-Xing,Li Xiao-Ning,Wang Jia-Bin,Yang Fan,Yang Yi,Ren Tian-Ling

DOI: https://doi.org/10.1142/S0217984917500427

2017-01-01

Modern Physics Letters B

Abstract:Plasma etching technology is an indispensable processing method in the manufacturing process of semiconductor devices. Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and CFD-TOPO is used to simulate the surface of the sample. The effects of chamber pressure, bias voltage and ICP power on the reactant particles were investigated, and the etching profiles of SiO2 were obtained. Simulation can be used to predict the effects of reaction conditions on the density, energy and angular distributions of reactant particles, which can play a good role in guiding the etching process.

Study on optical emission spectrum of RF plasma during amorphous silicon based film etching

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in Cf4 Plasma

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Investigation on RF styrene plasma by emission spectroscopy

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Electron Field Emission Studies from Amorphous Carbon Thin Films

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

Mass spectrometric study of plasma etching

Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Simulation of SiO2 etching in an inductively coupled CF4 plasma