Formation and composition analysis of the surface layers in as-fired PbTiO 3 thin films by sol-gel processing

TAO ZHU,GAORONG HAN,GAOLING ZHAO,ZISHANG DING

DOI: https://doi.org/10.1023/A:1018533121879

1997-01-01

Journal of Materials Science Letters

Abstract:null

What problem does this paper attempt to address?

Surface layers of the sol-gel derived PbTiO3 thin films

Tao Zhu,Gaorong Han,ZiShang Ding

1997-01-01

Abstract:Surface states of sol-gel derived PbTiO3 thin films was analysed by X-ray photoelectron spectroscopy. The nonstoichiometric surface layers of as-fired PbTiO3 thin films obtained by sol-gel process were formed during sinter stage. Other notices were the PbTiO3 thin films with stoichiometric surface obtained by the processes of sputtering and then annealing in air at 600��C. The results show that the nonstoichiometric surface of the as-fired thin film is enriched. The thickness of the surface layer is about 40nm.
Preparation of PZT Thick Film by a High Speed Sol-gel Method

Jianguo Lü

2005-01-01

Abstract:Crack free dense PZT thick films with total thickness of 2.56 μm were successfully prepared by a modified sol-gel method on Pt(111)/Ti/SiO_2/Si(100) substrate. To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition. The XRD patterns show that strongly (100) oriented PZT films can be obtained when the pyrolysis temperature of 350 ℃ is applied. The SEM image of the cross-sectional microstructure of PZT films show that the films are dense and the film grains exibit an obvious columnar growth. The films exibit good dielectric properties and the P_r of the film is 15 μC/cm~2 and the E_c is 39 kV/cm.
Preparation of PbTiO3 thin films by a modified Sol-Gel processing

X. T. Chen,L. Luo,H. Li,W. G. Luo,A. L. Ding,P. S. Qiu,X. P. Qu

DOI: https://doi.org/10.1080/00150199708260529

1997-01-01

Ferroelectrics

Abstract:Lead titanate thin films were prepared on platinum-coated silicon substrates by a modified sol-gel method. The working solution was synthesized by mixing lead acetate trihydrate and tetrabutyl titanate with solvent and catalyst at room temperature without using the fluxing process. The effects of film lead content and processing variable including annealing temperature and heating time during rapid thermal annealing on structures and ferroelectric properties were investigated.
Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Q Zhang,TL Ren,LT Zhang,J Zhu,ZJ Li

DOI: https://doi.org/10.1143/jjap.40.5074

IF: 1.5

2001-01-01

Japanese Journal of Applied Physics

Abstract:The ferroelectric Pb(Zr, Ti)O3 (PZT) thin films have been directly synthesized on silicon substrates by sol–gel method. X-ray diffraction (XRD) analysis reveals that besides the rhombohedral structure, the random oriented tetragonal perovskite PZT is formed with the lattice parameters of a=3.97 Å and c=4.10 Å. Energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) results indicate that the chemical composition of the PZT thin film is stoichiometric just as designed. High resolution electron microscopy (HREM) results show that amorphous SiOx (x=1–2) layer and nanometer lead grains are formed at the interface between the silicon substrate and PZT thin film.
Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Fan Zhang,Rong Jun Zhang,Zi Yi Wang,Yu Xiang Zheng,Song You Wang,Hai Bin Zhao,Liang Yao Chen,Xiao Bin Liu,An Quan Jiang

DOI: https://doi.org/10.3938/jkps.63.53

2013-01-01

Journal of the Korean Physical Society

Abstract:Polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films prepared on Pt/Ti/SiO 2 /Si substrate by using solgel technique were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical properties of the films were investigated by using spectroscopic ellipsometry (SE) with a four-phase optical model, air/roughness layer/PZT layer/Pt layer in the spectral range of 300–800 nm. The optical band gap of the films calculated following the Tauc’s Law was smaller than that of an amorphous PZT thin film with some microcrystals existing on the surface. The result indicates that the quantum-size effect leads to an increase in band gap when the crystalline dimensions become very small.
Formation of thin films by sol-gel processing

Qing-Xin Su,Ji Zhou,K. M. Moulding,D. J. Barber

DOI: https://doi.org/10.1016/0167-577x(96)00049-3

IF: 3

1996-01-01

Materials Letters

Abstract:Abstract Pb(Fe 1 2 Ta 1 2 ) O 3 (PFT) thin films with the perovskite structure have been prepared successfully on Si(III) substrates by a sol-gel process. The crystallinity of the thin films was characterized by X-ray diffraction and their micro structures were observed by transmission electron microscopy (TEM). It was found that the perovskite phase could only be formed with an excess lead content over stoichiometric composition and primary perovskite phase with a strong (110) orientation was obtained at annealing temperatures between 680 °C and 730 °C.
A Preliminary Raman Investigation of the Lead Titanate Thin Films Via Sol-Gel Process

T Zhu,GR Han,GL Zhao,ZS Ding,ZF Han

2009-01-01

Journal of Material Science and Technology

Abstract:Raman spectra of the PbTiO3 films via sol-gel process were investigated by using a Jobin Yvon U1000 system. Compared with the Raman spectra of the PbTiO3 single crystals, Raman peaks of PbTiO3 films shift downward, which is attributed to the stress effect in the PbTiO3 films exerted by the substrate and the size effect on the Raman frequencies.
Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Wen Gong,Jing‐Feng Li,Xiangcheng Chu,Zhilun Gui,Longtu Li

DOI: https://doi.org/10.1016/j.actamat.2004.02.025

IF: 9.4

2004-01-01

Acta Materialia

Abstract:Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary region were deposited onto Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates using a sol–gel method. A seeding layer was introduced between the most underlying surface of the PZT film and the platinum electrode surface to control the texture of the PZT thin film. The lead oxide seeding layer resulted in the formation of a single-phase perovskite and absolutely (1 0 0)-textured PZT film. SEM, XRD, XPS, and AES were used to characterize the evolution of the lead oxide layer and the PZT thin films. The growth kinetic mechanism of the (1 0 0)-textured PZT thin films was proposed phenomenologically. The ferroelectric and piezoelectric properties of the PZT films were also evaluated and discussed in association with different preferential orientations.
Crystallization Behavior of PZT Film Prepared by Sol–gel Route

F. Yang,L. Wang,F. Zheng,W. D. Fei

DOI: https://doi.org/10.1007/s10853-006-0340-0

IF: 4.5

2006-01-01

Journal of Materials Science

Abstract:The X-ray scattering measurements were used to investigate Pb(Zr,Ti)O3 films prepared by sol–gel process. From analysis of specular and off-specular X-ray reflectivities, the morphology of nanoscale pores in Pb(Zr,Ti)O3 film was determined by adjusting a model to the observed data. It is found that nanoscale pores in the films were closely attributed to the precursor with higher molar concentration. Furthermore, nanoscale pores present a certain degree of order in the direction normal to the film surface, which mainly distribute near the interface between films and substrate. The pores gradually close with annealing time increasing, and the closing process of the pores leads to pit formation in the film surface.
Investigation on the Microstructure and Optical Performance of TiO_2 Films by Sol-Gel Method

Gaorong Han

2005-01-01

Journal of Functional Biomaterials

Abstract:Porous titania thin films were obtained via sol-gel method with hydroxypropyl-cellulose(HPC) as the additive,ethylene glycol monomethyl ether as solvent.The films were characterized by Scanning electron microscope(SEM),X-ray diffraction(XRD),surface profiler α-200 and UV-visible spectrum.It was found that the porous titania films are single anatase,and with the concentration of HPC increase,the pore size enlarged;the thickness of the films decreased;the size of the grain size decreased first then increased;the transmission decreased.
Preparation and Study of Oriented TiO2 Thin Film

ZHANG Chang-sha,ZHAO Gao-ling,YANG Yao-dong,HAN Gao-rong

DOI: https://doi.org/10.3321/j.issn:1001-9731.2006.08.030

2006-01-01

Abstract:TiO_2 thin film was prepared by dipping the sol-gel-derived prefabricated film in the TiO_2 aqueous suspension and annealing.Crystalline behavior of the samples was investigated by X-ray diffraction(XRD).The results showed some of the samples were(101) preferentially oriented.Crystalline behavior and orientation of the samples were dependent on dipping time and annealing temperature.TiO_2 thin film which has(101) orientation was obtained when the dipping time and annealing temperature was 10h and 500℃,respectively.
Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

ZHANG Yi,PAN Feng,BAO Da-qun,WANG Jian-yan,GUO Hang

DOI: https://doi.org/10.3788/ope.20132111.2893

2013-01-01

Optics and Precision Engineering

Abstract:This paper explores how to prepare the Pb(Zrx Ti1-x)O3(PZT)thin films by using the solgel method on a silicon substrate,then it tests the film characteristics by different methods.The solution with different compositions and proportions is designed according to the molecular formulas,and then the solution is coated on Titanium(Ti)or Platinum/Titanium(Pt/Ti)substrates.The X-ray diffraction(XRD)analysis is used to characterize the orientation and crystalline quality of the PZT thin films,and the Atomic Force Microscopy(AFM)is used to study their morphologies.The influences of different heat treatment temperatures on the crystalline quality and surface morphology are analyzed.Based on this,a Micro-electro-mechanical System(MEMS)process is developed for the PZT thin film structure to measure their ferroelectric properties,and a sawyer tower circuit is used to measure the polarization electric hysteresis.The results show that PZT thin films prepared by the solgel method have good ferroelectric property and morphologies at heat treatment of 400℃and annealing treatment of 650℃,and can be applied to the PZT-based MEMS and nano devices.
Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

W Gong,XC Chu,JF Li,ZL Gui,LT Li

DOI: https://doi.org/10.4028/www.scientific.net/kem.280-283.239

2007-01-01

Key Engineering Materials

Abstract:Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.
Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Q. G. Chi,W. L. Li,W. D. Fei,S. C. Xu,baomin feng

DOI: https://doi.org/10.1016/j.apsusc.2010.03.082

IF: 6.7

2010-01-01

Applied Surface Science

Abstract:It is shown that different highly oriented Pb(Zr0.52,Ti0.48)O3 films can be obtained on Pt/Ti/SiO2/Si substrate using a sol–gel technique. The effects of pyrolysis temperature on the orientation, phase composition and ferroelectric properties of the films are investigated. It is found the ferroelectric hysteresis loops of (111)-oriented film, (111) and (100) mix-oriented film can both be saturated when the external electric field is large enough, whereas the hysteresis loop of (100)-oriented film is difficult to saturate. The analysis of X-ray diffraction indicated the possibility of different phase composition in different oriented films under large film residual stress. Higher remnant polarization (53μC/cm2) for (100)-oriented film can be attributed to its more tetragonal phase composition, which results in that the in-plane domain switching can continuously occur with external electric field increasing.
Sol–gel derived nanocrystalline thin films of PbTiO3 on glass substrate

S.D. Cheng,C.H. Kam,Y. Zhou,W.X. Que,Y.L. Lam,Y.C. Chan,W.S. Gan

DOI: https://doi.org/10.1016/S0040-6090(00)01221-9

IF: 2.1

2000-01-01

Thin Solid Films

Abstract:Thin films of PbTiO3 have been prepared on soda-lime glass substrates. The sol was prepared by mixing tetrapropyl orthotitanate and lead acetate trihydrate in acetic acid. The films were deposited by spin coating and annealed at 500 degreesC for 30 min. The structural and optical properties of the films were characterized by means of X-ray diffraction, atomic force microscopy, variable angle spectroscopic ellipsometry, W-VIS spectroscopy, micro-Raman spectroscopy and the m-line technique. The electrical properties of the film were studied with a Sawyer-Tower bridge. The films have a pure perovskite phase with a c/a ratio of 1.054 and consist of crystallites with a size of a few tens of nanometers. Raman studies show the typical phonon modes of PbTiO3, and the shift of the Raman peaks indicates that the films are stressed. The films are highly transparent and the absorption edge is approximately 3.70 eV. A two-layer film is found to support two TE and two TM modes at a wavelength of 633 nm. (C) 2000 Elsevier Science S.A. All rights reserved.
Study of annealed sol-gel PZT films prepared by reversed-dip-coating

Zhu Chen,Shuren Zhang,Chengtao Yang,Jinlong Li,Sheng Wang,Shuiqin Zhang

2004-01-01

Abstract:Sol-Gel PZT films were prepared by reversed-dip-coating of precursor-monomers of lead acetate trihydrate[Pb(OCOCH3)2 3H2O], zirconium nitrite (Zr(NO3)4·5H2O), and titanium butoxide Ti(OC4H9)4 on Pt/Ti/SiO2/Si substrates, respectively. The films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) to understand influence of film growth conditions on its properties, including annealing temperature, cooling rate, and oxygen pressure, etc.
Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Quanliang Zhao,Dezhi Su,Maosheng Cao,Guangping He,Jiejian Di,Junjie Yuan,Dawei Wang

DOI: https://doi.org/10.1007/s10854-013-1279-y

2013-01-01

Journal of Materials Science Materials in Electronics

Abstract:Pb(Zr0.52Ti0.48)O3 (PZT) thick films, with thickness up to 4 μm, using PbTiO3 (PT) buffer layers were successfully prepared on silicon-based substrates by a sol–gel method. Thermal analysis (thermogravimetric–differential thermal analysis) of PT and PZT sols were used to determine the pyrolysis and annealing temperatures. X-ray diffraction results show that the PZT/PT composite thick films possess perovskite structure and the dominant crystalline orientation changes from (100) to (110) with increasing the film thickness. Furthermore, the composite thick films exhibit thickness-dependent ferroelectric and dielectric properties, i.e., the coercive field decreases while dielectric constant increases as the thickness increases. Theoretical analysis shows that the thickness-dependent electrical properties are mainly attributed to the low dielectric constant of PT buffer layer and the relaxation of internal stress in PZT films.
Formation and transformation of ZnTiO3 prepared by sol–gel process

Lei Hou,Yu-Dong Hou,Man-Kang Zhu,Jianlan Tang,Jing-Bing Liu,Hao Wang,Hui Yan

DOI: https://doi.org/10.1016/j.matlet.2004.07.046

IF: 3

2005-02-01

Materials Letters

Abstract:ZnTiO3 powders with pure hexagonal phase were prepared by the sol–gel process with Zn(NO3)2·6H2O and Ti(OC4H9)4 materials. The thermal behavior and phase transformation of the gels were investigated by the differential scanning calorimetry–thermogravimetry (DSC–TG) analysis, X-ray diffraction (XRD) patterns, Fourier-transforming infrared (FT-IR) spectroscopy, and Raman scattering spectroscopy. The results revealed that pure hexagonal phase of ZnTiO3 could be obtained at low temperature of 800 °C. However, in further increased temperature above 900 °C, hexagonal ZnTiO3 would decompose into cubic Zn2TiO4 and rutile TiO2.

materials science, multidisciplinary,physics, applied
Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

PeiYu Yan,Tao Su,Longtu Li,Xiaowen Zhang

1995-01-01

Abstract:The Pb(Zr0.5Ti0.5) O3 (PZT) ferroelectric bulk ceramics and thin films were prepared by Sol-Gel processing with their crystallization and electrical properties investigated. It was found that (1) the crystallization of thin films was strongly influenced by the substrates: the more complete the lattice of the substrate, and the smaller the lattice mismatch between the PZT thin-films and their substrates, the better the crystallization of the PZT thin films; (2) the adoption of the PbTiO3 transitional layer can enhance the crystallization of PZT thin-films prepared on the platinized Si; (3) the PbTiO3 transitional layer combined with the thin film forms a series circuit whose apparent electric properties are close to that of the corresponding PZT bulk ceramics.
Preparation and structure of preferentially oriented PbTiO3 glass-ceramic thin films by sol-gel process

Dinghua Bao,Liangying Zhang,Xi Yao

1999-01-01

Abstract:PbTiO3 (PT) glass-ceramic thin films were successfully prepared by sol-gel process, using lead acetate trihydrate, tetra-n-butyl titanate, and n-propyl borate as raw materials. Pinhole-free thin films were obtained. The glass-ceramic films with high PT content are difficult to achieve by conventional melting method but can be easily prepared by sol-gel process. PT crystallites with average size about 0.1 μm were uniformly distributed in thin films. Effects of thermal processing techniques on structure of thin films were investigated. The results show c-axis preferentially oriented PT glass-ceramic thin films can be obtained by conventional thermal annealing (CTA) technique. However, using rapid thermal annealing (RTA) method, PT pyrochlore phase can be suppressed, and the thin films show slight a-axis preferential orientation.

Formation and composition analysis of the surface layers in as-fired PbTiO 3 thin films by sol-gel processing

Surface layers of the sol-gel derived PbTiO3 thin films

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Preparation of PbTiO3 thin films by a modified Sol-Gel processing

Interface and Surface Characterization of Lead Zirconate Titanate Thin Films Grown by Sol–Gel Method

Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Formation of thin films by sol-gel processing

A Preliminary Raman Investigation of the Lead Titanate Thin Films Via Sol-Gel Process

Preparation and Characterization of Sol–gel Derived (100)-Textured Pb(Zr,Ti)O3 Thin Films: PbO Seeding Role in the Formation of Preferential Orientation

Crystallization Behavior of PZT Film Prepared by Sol–gel Route

Investigation on the Microstructure and Optical Performance of TiO_2 Films by Sol-Gel Method

Preparation and Study of Oriented TiO2 Thin Film

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O-3 Films on Silicon Wafers

Phase compositions and ferroelectric properties of Pb(Zr0.52,Ti0.48)O3 thin films with different highly orientations prepared by a sol–gel route

Sol–gel derived nanocrystalline thin films of PbTiO3 on glass substrate

Study of annealed sol-gel PZT films prepared by reversed-dip-coating

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Formation and transformation of ZnTiO3 prepared by sol–gel process

Preparation and characterization of Sol-Gel derived PZT bulk ceramics and thin films

Preparation and structure of preferentially oriented PbTiO3 glass-ceramic thin films by sol-gel process