Study of diamond film on silicon tip array

Guang Yuan,Yixin Jin,Changchun Jin,Hang Song,Baolin Zhang,Yongqiang Ning,Hong Jiang,Tianming Zhou,Shuwei Li

1997-01-01

Abstract:The diamond film on the silicon tips array was deposited by MW-PCVD technique. The samples obtained were investigated by SEM and X-ray diffraction technique. It is shown that the diamond film is (111) oriented. The results are discussed.

What problem does this paper attempt to address?

Preparation of Anti-Reflective and Protective Diamond-Like Carbon Film on Si Substrate by Femto-Second Pulsed Laser Deposition

王淑云,郭延龙,刘旭,曹海源,王会升,程勇

DOI: https://doi.org/10.3788/hplpb201002208.1705

2010-01-01

High Power Laser and Particle Beams

Abstract:A femtosecond pulsed laser(800 nm, 120 fs, 3 W, 1 000 Hz) was used to deposit diamond-like carbon(DLC) films on Si substrate. Effects of bias, substrate temperature and oxygen ambient on DLC films were studied. Experiments show that the best DLC film was deposited under the conditions of room temperature, no bias and low oxygen pressure(2 Pa). The hydrogenfree DLC film was deposited on one side of Si substrate, and on the other side, the common anti-reflective film was pre-deposited. The average transmittance at 3~5 μm waveband was larger than 90%, and the nano-hardness was up to 40 GPa. There were no nicks on the film after being rubbed for 105 times by a 9.8 N rubber. Furthermore, the films have passed the high temperature, low temperature and salt-fog tests in military standards. T
Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

D.J. Qiu,A.M. Feng,H.Z. Wu

DOI: https://doi.org/10.1016/j.diamond.2003.11.086

IF: 3.806

2004-01-01

Diamond and Related Materials

Abstract:Nanostructured diamond films (NDFs) were grown on fine-polished Si(001) substrates by radio-frequency plasma-enhanced hot-filament chemical vapor deposition at low gas pressure of approximately 2 Torr. High resolution field-emission scanning electron microscopy (FESEM), X-ray diffraction and Raman scattering spectroscopy were employed to characterize the NDFs. FESEM measurement indicated that diamond nuclei density exceeded 1010 cm−2 after growth for 20 min, which should render potential applications, such as in the fabrication of diamond-related field-emission devices. Photoluminescence excitation characterizations revealed the sharp optical absorption band edge of NDFs, and the band gap is 5.34 eV.
Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Yan Chang,Guanbi Chen,Lei Wang,Deren Yang

DOI: https://doi.org/10.3969/j.issn.1672-7126.2007.06.005

2007-01-01

Abstract:A novel technique-intermittent supply of silane-has been successful developed to grow poly-crystalline silicon films by hot wire chemical vapor deposition on flexible substrates. The microstructures of the films were characterized with X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The results show that polycrystalline phase dominates in the films on polyimide substrate. Possible mechanisms of the film growth at different periods of silane supply were also tentatively discussed.
A Study of Interface Structure Between Diamond Film and Silicon Substrate

QJ GAO,H YUAN,X ZHANG,XB FEN,JH LI,YC YANG,ZD LIN,XF PEN,BX YANG,GS JIANG,FX LU

DOI: https://doi.org/10.1016/0040-6090(92)90792-a

IF: 2.1

1992-01-01

Thin Solid Films

Abstract:Diamond thin films have been successfully grown on Si(100) substrates at low temperatures from 315°C to 685°C by a microwave plasma chemical vapour deposition system. It is found that when oxygen is added to the CH4H2 gas mixtures at low temperature (below 600°C) the first step is the formation of SiO2 on the silicon substrate, and a diamond film is formed on SiO2.
Growth of well-adhered and smooth diamond thin films on fused silica substrates

Tianliang Hao,Chengru Shi,Yuewu Zeng

DOI: https://doi.org/10.1016/j.surfcoat.2003.08.077

IF: 4.865

2004-01-01

Surface and Coatings Technology

Abstract:Fused silica substrates were pretreated by ultrasonic vibration in diamond powder slurry. Under the appropriate pretreatment and growth conditions, the diamond nucleation density of higher than 1010 cm−2 was obtained. The average diamond grain size was ca. 150 nm, and continuous diamond thin films with smooth surfaces (average surface roughness ca. 6 nm) were synthesized by a four-step process using the hot filament chemical vapor deposition (HFCVD) technique. The optical transmittance of diamond thin films was 73–84% in the longer wave range (1–5 μm). The adhesion of diamond thin films grown 3 years ago is still good and the mechanism is briefly discussed.
Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Xu Ning,Zheng Zhihao,Sun Zhuo,Zhang Xiaofeng,Xu Chunfang,Wan Peiming,Xin Peisheng

DOI: https://doi.org/10.1016/0257-8972(94)90093-0

1994-01-01

Abstract:Using a hot-filament chemical vapour deposition (CVD) method, polycrystalline diamond films have been selectively deposited on Si(111) substrates pre-treated in different ways: roughened Si substrates with patterned Si3N4 mask, and polished Si substrates with selected-area ultrasound treatment by diamond powder. It has been demonstrated that the nucleation density of diamond deposited on the Si3N4 masked area of roughened Si substrate is strongly affected by the temperature on the surface of the substrate while that on the untreated area of polished Si substrate is less affected by the substrate temperature. The diamond nucleation density on the Si3N4 masked area has been shown to be more markedly affected by the concentration of CH4 in H-2 than that on the untreated Si area. It is suggested that the defects and cracks on the Si3N4 mask caused by hydrogen etching and thermal stresses produced during CVD processing are the main reasons for the increase in diamond nucleation on the Si3N4 masked area. The increase in the concentration of CH4 in H-2 appears to inhibit the emergence of defects on the Si3N4 mask. It is also suggested that the internal stresses in the Si substrate, chemical etching from hydrogen atoms and other factors cause defects and cracks on polished Si at substrate temperatures of above 900-degrees-C, which lead to an increase in diamond nucleation on the untreated area of the polished Si substrate.
Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Qijin Chen,Yan Chen,Jie Yang,Zhangda Lin

DOI: https://doi.org/10.1016/0040-6090(95)07086-9

IF: 2.1

1996-01-01

Thin Solid Films

Abstract:A very low pressure (13 Pa), high substrate temperature and a.c. discharge for the nucleation siage have been applied. Uniformly oriented and textured growth of (111) diamond (dia) with dia(111)//Si(111) and dia<<1(1)over bar>0>//Si<<1(1)over bar>0> has been achieved on not only well polished but also scratched silicon substrates using hot filament chemical vapor deposition. A probable explanation, heteroepitaxy, was hypothesized. The as-grown diamond films were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray analysis.
Elective Deposition of Diamond Films on Si (100) Substrates

常开朋,程文娟,江锦春,张阳,朱鹤孙,沈德忠

DOI: https://doi.org/10.3969/j.issn.1000-985x.2003.06.013

2003-01-01

Abstract:Diamond films were selectively deposited on Si (100) substrates by the microwave plasma chemical vapor deposition system (MPCVD) . The copper mesh was used as template to realize the selective deposition. The films were characterized by high resolution scanning electron microscopy and Raman scattering spectroscopy. Under the same growth conditions, the diamond films deposited on silicon substrate without copper mesh were also studied. It was found that the nucleation density and the quality of the films are improved greatly using copper mesh as template.
Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

QJ CHEN,J YANG,ZD LIN

DOI: https://doi.org/10.1063/1.114354

IF: 4

1995-01-01

Applied Physics Letters

Abstract:Oriented diamond films were achieved on Si(001) and Si(111) substrates via hot filament chemical vapor deposition (HFCVD) with the orientation relationship of dia〈110〉//Si〈110〉 and dia(001)//Si(001) for Si(001), and of dia〈11̄0〉//Si〈11̄0〉 and dia(111)//Si(111) for Si(111). The substrates were negatively biased relative to the filament during the nucleation stage. The as-grown films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The role of negative bias is discussed in light of the differences between HFCVD and microwave plasma CVD. In conclusion, the importance of the electron emission from the diamond coating on the substrate holder is highlighted, while the ion bombardment is eliminated as a main factor based on our experiments.
Growth of Diamond Films on Si3n4 Coated Silicon Substrates

N Xu,ZH Zheng

DOI: https://doi.org/10.1179/mst.1996.12.1.1

IF: 1.8

1996-01-01

Materials Science and Technology

Abstract:Polycrystalline diamond films were deposited on to Si3N4 coated silicon substrates using thermal chemical vapour deposition. The defects on the amorphous Si3N4 layer played an essential role in diamond nucleation. After deposition, very few diamond crystallites were found on the untreated Si3N4 coating, while a diamond film had formed on the ultrasonic diamond powder treated Si3N4 coating. During the deposition process, the substrate temperature drastically affected the integrity of the intermediate Si3N4 layer. At a substrate temperature above 850 degrees C, the Si3N4 layer began to degrade. The lower CH4 concentration produced better diamond films in terms of crystallinity and purity. The adhesion of the diamond film to the Si3N4 coated silicon substrate and the friction coefficient between the diamond stylus and the diamond film decreased as the CH4 concentration increased. The corrosion resistance of the diamond film on the Si3N4 coated silicon substrate was much stronger than that of the Si3N4 film on the silicon substrate. (C) 1996 The institute of Materials.
Growth Characteristics of diamond films deposited on Si and W substrates

Fangqing Zhang,Wenjun Zhang,Yafei Zhang,Guanghua Chen,Q.J. Gao,Xuebin Jiang

DOI: https://doi.org/10.1088/1004-423X/2/1/007

1993-01-01

Acta Physica Sinica (Overseas Edition)

Abstract:Growth characteristics of diamond films synthesized by using a dc arc discharge plasma CVD were studied by means of XRD, SEM and reflection electron diffraction. The results showed that columnar growth of the diamond films was observed, the columns having an average diameter of about 15 μm, with sharp and regular base edges. Diamond grains grown on the substrate were initially of uniform polygons. An interfacial transition layer of polycrystalline SiC was observed between the diamond film and Si substrate. Diamond grains grown during the early-stage on W substrate were also uniform, and an interfacial transition layer of polycrystalline WC was observed between the diamond film and the substrate.
Si+ Implantation: A Pretreatment Method for Diamond Nucleation on a Si Wafer

J YANG,XW SU,QJ CHEN,ZD LIN

DOI: https://doi.org/10.1063/1.113731

IF: 4

1995-01-01

Applied Physics Letters

Abstract:Diamond films have been obtained by the hot-filament chemical vapor deposition method on a silicon wafer. The substrates were preimplanted by a Si+ ion beam (ion energy 25 keV, implantation dosage 2×1017 Si/cm2). X-ray diffraction, scanning electron microscopy, and Raman spectroscopy were used to characterize the structure of the synthesized films. The mechanisms for diamond nucleation on a Si wafer have been discussed. Surface stress is believed to be one of the most important factors for low pressure diamond nucleation on the Si wafer.
Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

NS Xu,J Chen,YT Feng,SZ Deng

DOI: https://doi.org/10.1116/1.591325

2000-01-01

Abstract:Nanostructured diamond films were deposited on the etched silicon wafer by using dielectrophoresis method. The properties of the film were analyzed using scanning electron microscopy and micro-Raman spectrometry. Their field emission behavior was studied using an anode probe technique. A current density of 5 mA/cm2 was recorded at a field of 3.56 MV/m. This effect is attributed to the field enhancement at the rough silicon-diamond interface and the lower or even negative electron affinity of the diamond surface.
Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Li Rong-Bin,

DOI: https://doi.org/10.7498/aps.58.1287

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:Sulphur-doped and boron-sulphur co-doped diamond thin films were prepared by using chemical vapour deposition on p-type Si (100) and HTHP-diamond (100) substrates. The structures and properties of CVD diamond films were investigated with atom force microscope (AFM), Raman spectrum, sanning tunneling microscopy (STM) and current imaging tunneling current spectroscopy (CITS). Comparing the structures and properties of the doped diamond films grown on Si and HTHP diamond substrates, we find that the films deposited on Si substrates are composed of spherical grains with size of one hundred nanometer, the doped diamond films on Si substrates consist of large grains with a high fraction of grain boundaries due to the successive secondary nucleation,and the roughness of the films is estimated to be around 18.5nm. The doped diamond films on HTHP diamond substrates are composed of nanometer crystal grains with the sizes of 10—50nm and the film surface is flat with the roughness estimated to be around 1.8nm. Raman and resistivity measurements reveal that the films deposited on HTHP diamond substrates have much higher quality, fewer defects and lower stress, and higher conductivity than the films grown on Si substrates. Current imaging tunnelling current spectroscopy (CITS) images indicate that some grain boundaries and crystalline facets near the grain boundaries are he high electron emission regions. However, the grain boundaries and crystalline facets of the doped diamond films on HTHP diamond substrates have uniform electron emission currents, which indicates that the doped atoms are uniformly distributed in that films. The local I-V characteristics for films deposited on Si or HTHP diamond substrates indicate the n-type conduction.

physics, multidisciplinary
Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter

J Chen,SZ Deng,JC She,NS Xu

DOI: https://doi.org/10.1016/s0304-3991(99)00060-1

IF: 2.994

1999-01-01

Ultramicroscopy

Abstract:Details are given of an experimental study of the effects of surface treatment of silicon substrate on the field emission process of flat amorphous diamond (a-D) film field emitters. Using a filtered cathodic vacuum arc plasma deposition system (FCVAPD), the amorphous diamond (a-D) film was deposited on both non-treated and etched silicon wafers (n-type and p-type). The field electron emission characteristic was measured before and after depositing a-D film. The a-D film on etched silicon wafer shows distinct increase in emission current compared with that on non-treated silicon wafer. The phenomenon is attributed to two important reasons: the low or even negative surface electron affinity of a-D film and the local field enhancement at the Si-diamond interface.
Comparative Study of Electron Emission Characteristics of Silicon Tip Arrays with and Without Amorphous Diamond Coating

JC She,SE Huq,J Chen,SZ Deng,NS Xu

DOI: https://doi.org/10.1116/1.590600

1999-01-01

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Abstract:Details are given of experiments carried out to compare the field electron emission characteristics of single crystal silicon tip arrays with and without amorphous diamond coating. The coatings on the tip arrays were prepared using filtered vacuum arc plasma deposition technique. The morphology of the coating was studied in a scanning electron microscope. An anode probe technique was employed to measure the I-V characteristics, stability and turn-on fields of the tip-array emitters before and after coating. It has been found that the coating has effects not only on enhancing emission, but also stabilizing it. The physical reason for these effects is discussed.
Structure and Characteristics of Si-coated Diamond Grits

Lu,Jing,Hong Wang,Yanhui,Qi,Xuehai,Biao Huang,Dan Hao,Zang,Jianbing

2005-01-01

Abstract:During sintering process of diamond tools, metal bond containing graphitizing elements such as Fe, Co, Ni seriously erodes diamond grits, which reduces the strength of the diamond grits. In this paper, silicon films were coated on the surface of diamond grits by means of atomic layer deposition (ALD) from gaseous SiH4. Fourier transform infrared (FTIR) spectra, X-ray diffraction (XRD) and Atomic force microscopy (AFM) were utilized to analyze the structure and the morphology of Si-coated diamond respectively. The results suggested thatthe film was cubic-phase polycrystalline silicon and the surface of the film was smooth and continuous. According with the adsorption mechanism of SiH4 on the surface of diamond grits, the stretching and bending modes of SiH2 and SiH3 both existed. Differential thermal analysis (DTA) was used to compare the thermal stability of coated diamond and uncoated diamond. Owning to the protection of silicon films the starting oxidation temperature of coated diamond reached as high as 920℃, which was much higher than that of uncoated diamond. Bending experiment was conducted to measure the bending strength of Fe-Cu-Sn-Ni based metal bond diamond blade. In comparison with uncoated diamond, the bending strength of Sicoated diamond blade increased by 16.2%, scan electron microscope (SEM) observation of the blade fracture revealed that the deposited silicon films not only protected the diamond grits from erosion during sintering process but also realized the strong binding between the diamond grits and the bond.
Preparation and Characterization for Nanodiamond Thin Film for Electronic Field Emission Applications

J. Chen,F. Y. Xie,W. G. Xie,X. Liu,W. H. Zhang,S. Z. Deng,N. S. Xu

DOI: https://doi.org/10.1116/1.2825144

2008-01-01

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Abstract:The nanodiamond thin film is deposited on a single crystal silicon substrate by a dip-coating technique from the pretreated nanodiamond suspension. The surface structures of the as-prepared thin film and the annealed sample have been investigated by x-ray photoelectron spectroscopy and nuclear magnetic resonance. The change of surface elements of O, N, and a different hybridized carbon is derived. Initiation of graphitization is observed at an annealing temperature of 900 °C and the dangling bonds from the internal diamond phase are confirmed. The electron field emission property of this annealed sample is better than the as-prepared thin film. The enhancement of electron emission is discussed with the change of surface structure and the surface states.
The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

QJ Gao,LP You,XH Pan,F Zhang,XF Peng,ZD Lin

DOI: https://doi.org/10.1016/s0925-9635(97)00147-7

IF: 3.806

1997-01-01

Diamond and Related Materials

Abstract:By using the straight hot filament chemical vapor deposition method with one falt horizonatal filament, diamond films were rapidly grown on a scratched silicon substrate. Observing two kinds of interface structures of the samples by cross-section high-resolution transmission electron microscopy, we found that diamond {111}-oriented films are epitaxially grown on β-SiC{111} planes with a tilt angle of about 7° around the common [110] axis. We also found that diamond〈771〉 planes are parallel to silicon〈111〉 planes on which diamonds are directly epitaxially grown on silicon substrate. The interface dislocations are of either 60°-type or Schockley partial dislocation in relation to our observations.
Approach of selective nucleation and epitaxy of diamond films on Si(100)

X. Jiang,E. Boettger,M. Paul,C.‐P. Klages

DOI: https://doi.org/10.1063/1.112030

IF: 4

1994-09-19

Applied Physics Letters

Abstract:Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.

physics, applied

Study of diamond film on silicon tip array

Preparation of Anti-Reflective and Protective Diamond-Like Carbon Film on Si Substrate by Femto-Second Pulsed Laser Deposition

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

A Study of Interface Structure Between Diamond Film and Silicon Substrate

Growth of well-adhered and smooth diamond thin films on fused silica substrates

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Elective Deposition of Diamond Films on Si (100) Substrates

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Growth of Diamond Films on Si3n4 Coated Silicon Substrates

Growth Characteristics of diamond films deposited on Si and W substrates

Si+ Implantation: A Pretreatment Method for Diamond Nucleation on a Si Wafer

Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

Effects of the Surface Treatment of Silicon Substrate on the Field Emission Characteristic of A Silicon and Amorphous Diamond Cold Cathode Emitter

Comparative Study of Electron Emission Characteristics of Silicon Tip Arrays with and Without Amorphous Diamond Coating

Structure and Characteristics of Si-coated Diamond Grits

Preparation and Characterization for Nanodiamond Thin Film for Electronic Field Emission Applications

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Approach of selective nucleation and epitaxy of diamond films on Si(100)