Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Dongxiang Luo,Hua Xu,Min Li,Hong Tao,Lei Wang,Junbiao Peng,Miao Xu

DOI: https://doi.org/10.1109/ted.2013.2292552

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:The electronic properties of amorphous indium-zinc-oxide (IZO) thin film transistors (TFTs) with back-channel-etch (BCE) structure was investigated. In the cyclic-transfer characteristics test, the initial transfer curve of BCE-type transistors exhibited a significant hysteresis phenomenon under a high-gate bias (V-GS). However, in the following cycles of the transfer curves, the hysteresis was significantly reduced, and the curves nearly overlapped the reverse sweeping of the initial transfer characteristics. Additionally, the threshold voltage (V-th) shift in the initial hysteresis loops increased with the increase of the V-GS. Those phenomena may be attributed to the molybdenum oxide (MoO3) residue generated during the patterning of the source/drain electrodes using hydrogen peroxide (H2O2)-based etchants. It is believed that etching residue acts as the acceptor-like states trapping electrons into the back interface between the channel and the residual layer. To eliminate the V-th shift in BCE-TFTs, SF6 plasma is applied to the back surface of the IZO channel layer. The modified devices show a more stable V-th.