p-type conduction in nitrogen-doped SnO 2 films grown by thermal processing of tin nitride films

S. S. Pan,S. Wang,Y. X. Zhang,Y. Y. Luo,F. Y. Kong,S. C. Xu,J. M. Xu,G. H. Li

DOI: https://doi.org/10.1007/s00339-012-7288-5

2012-01-01

Applied Physics A: Materials Science and Processing

Abstract:p-type nitrogen-doped SnO 2 (SnO 2 :N) films were grown by thermal processing of amorphous tin nitride films at temperatures between 350 and 500 ∘ C in flowing O 2 –Ar gas mixture. From high-resolution X-ray photoelectron spectroscopy (XPS) and X-ray diffraction patterns, it is deduced that the N atoms replace the O atoms in the SnO 2 lattice. The N dopant is more tightly bound in SnO 2 :N at higher thermal oxidation temperatures deduced from the XPS results. The hole concentration obtained at an oxidation temperature of 400 ∘ C is 1.87×10 19 cm −3 , which is dramatically enhanced compared to previous reports. Our results indicate that the high-temperature thermal oxidation of tin nitride is a facile and effective route to alleviate the self-compensation effect, reduce the content of γ -N 2 double donors, and reinforce the stability of N dopant in the SnO 2 :N films.