Abstract:Photocathodes are mainly used in such hi-tech fields as photoelectric conversion devices, radiation detection, and accelerators. Laser-driven photocathodes are characterized by low emission, high brightness, easy control, rapid response, etc., and are hopeful to become satisfactory electron sources for next-generation high-frequency miniaturized electric vacuum microwave devices, to effectively improve the performance and rapid response capability of the devices. For this reason, based on previous research efforts on photocathodes, we proposed an idea that ion beam surface treatment technology was used to modify the substrate surface of photocathodes and make the surface textured, enhancing the light absorptivity and alkali metal adsorption performance of photocathodes, so as to improve their emission performance. The surface appearance of photocathodes was analyzed using the scanning electron microscope (SEM) method, and it was found that the surface of oxygen-free copper treated by ion bombardment had a nanocone structure. The photoemission characteristics of photocathodes before and after the treatment of the surface of oxygen-free copper were studied. Before and after the treatment, the maximum photoemission current densities under stable emission performance of the photocathode were 60.5 mA cm-2 and 146.0 mA cm-2, respectively, and the calculated quantum efficiencies were 2.67 × 10-3 and 1.71 × 10-2, respectively. The quantum efficiency of the photocathode was increased by 5.41 times after the ion surface treatment. The results show that the photoemission quantum efficiency of the oxygen-free copper surface was increased greatly after modification. It was believed through analysis that the main cause for the increase in quantum efficiency was the enhancement of light absorptivity and the increase in the emission surface area.

Influence of Low-Temperature Argon Ion-Beam Treatment on the Photovoltage Spectra of Standard Cz Si Wafers

Impacts of Low Energy Argon Beam on Enhancing the Surface Wettability and Electrical Performance of CA/PANI Films

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Optical and structural characterization of zinc oxide thin films upon ion beam assisted smoothing

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Micro-characterisation of Si wafers by high-pressure thermopower technique

Study of ion sputtering on AlxSn100-x alloy system

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

Influence of argon irradiations on modifying the surface properties and optical behavior of polymer composite films

Subsurface Characteristics of Metal-Halide Perovskites Polished by Argon Ion Beam

Effect of Argon Ion Irradiation on Grain Orientation in Platinum Thin Films

Ion Beam radiation and temperature effect on Co/Si and CoO/Co/Si thin films

Ion beam etching of dense and porous PZT films

Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

Irradiation simulation of zirconium using high energy argon implantation

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Effect of surface treated amorphous Si–Zn–Sn–O on the electrical properties of thin film transistors by Ar plasma treatment

Influence of Ion Beam Surface Treatment on the Emission Performance of Photocathodes

Effect of ion irradiation on superconducting thin films