Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation

Ultra-Thin Metal-Silicide/Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy

Study of ion sputtering on AlxSn100-x alloy system

Investigation of 4H-Sic Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature

Burrowing Of Pt Nanoparticles Into Sio2 During Ion-Beam Irradiation

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Characterization of Focused-Ion-Beam-Induced Damage in N-Type Silicon Using Schottky Contact

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Insitu Energy Dispersive-X-Ray Reflectivity Measurements of H Ion-Bombardment on Sio2/Si and Si

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride

Effects of Surface Properties on Barrier Height and Barrier Inhomogeneities of Platinum Contacts to N-Type 4H-Sic

Study of ion bombardment of SiC ceramics: surface and interfacial reaction modification

200 Nm–1000 Nm Spectra of Light Emitted in the Impact of 40 Ar 10+ Upon Al and Si Solid Surfaces

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode

Monte Carlo simulation of low energy He+, Ar+, Xe+ bombardment in SiC