Abstract:Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)–semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti–SiC interface induced by localized Joule's heating is responsible for the amorphization and the possible formation of titanium silicide, titanium carbide, or ternary phases. The mushroom-like hillock in the Ti layer can be attributed to Rayleigh–Taylor instability, as another evidence for ever-happened localized melting near the Schottky interface. These modifications at nanoscale in turn cause localized degradation of the Schottky contact, resulting in permanent increase in leakage current. This experimental study provides very valuable clues for a thorough understanding of the SELC mechanism in SiC diodes.

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

Ultra-Thin Metal-Silicide/Si Schottky Contacts Studied by Ballistic Electron Emission Microscopy

Influence of Electronic Transmission on the Electrical Transport Properties in Metal–semiconductor Contacts

Characterization of Focused-Ion-Beam-Induced Damage in N-Type Silicon Using Schottky Contact

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

A BEEM Study of the Temperature Dependence of the Barrier Height Distribution in PtSi/n-Si Schottky Diodes

Ballistic Electron Emission Microscopy Studies Of The Temperature Dependence Of Schottky Barrier Height Distribution In Cosi2/N-Si(100) Diodes Formed By Solid Phase Reaction

Carrier Transport In Graphite/Si3n4-Nanobelt/Ptir Schottky Barrier Diodes

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Variation of Schottky Barrier Height Induced by Dopant Segregation Monitored by Contact Resistivity Measurements

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide