Abstract:Silicon carbide is receiving increasing attention as a substrate due to its stability in harsh environments. At the same time, further minimization of sensors and micro devices requires new techniques for nanofabrication. In this context, the helium focused ion beam (He-FIB) is a promising candidate, due to its high resolution and capability of sub-10 nm fabrication, as well as its ability to modify the properties of the substrate via ion implantation. In this work, we consider previously reported experimental images of subsurface damage in both SiC and Si, as induced by He-FIB under line scanning, and provide a summary of the resulting amorphous and bubble regions as a function of the beam energy and dose. Based on empirical relations collectively encapsulated into a damage profile function (DPF) that was previously used to describe the contour of the amorphous region in Si, we focus on presenting a generalized damage profile function (GDPF) that enables describing the contours of both the amorphous and bubble regions in SiC simultaneously. In particular, the role of swelling, as a relatively small protruding region from the initial surface that eventually restricts the upward expansion of the bubble region, is fully considered. The parameters of the resulting mathematical model are related to measurements from the experimental cross-sectional images and are eventually optimized by using an evolutionary algorithm. Comparison to the experimental profiles concludes that the proposed GDPF captures both the amorphous and bubble region profiles with good precision.

Characterization of Focused-Ion-Beam-Induced Damage in N-Type Silicon Using Schottky Contact

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Study of Surface Damage in Silicon by Irradiation with Focused Rubidium Ions

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Characterization of Radiation Damage Induced by B and B4 Ion Implantation into Silicon

The Tensile Effect on Crack Formation in Single Crystal Silicon Irradiated by Intense Pulsed Ion Beam

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Study of damage generation induced by focused helium ion beam in silicon

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide