Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation

Role of Carrier Concentration in Swift Heavy Ion Irradiation Induced Surface Modifications

Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

The Effects of 1 MeV Electron Irradiation on the Current-Voltage Characteristics of Au/p-InP Structures

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Investigation of 4H-Sic Schottky Barrier Diodes Irradiated with 6 MeV Au Ions at Low Temperature

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy

A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Influence of Swift Heavy Ion Irradiation on Electrical Characteristics of Β-Ga2o3 Schottky Barrier Diode