Ion Beam radiation and temperature effect on Co/Si and CoO/Co/Si thin films

A. S. Bhattacharyya,A.S. Bhattacharyya

DOI: https://doi.org/10.48550/arXiv.1608.05663

2016-08-18

Materials Science

Abstract:Co and CoO thin films were deposited by magnetron sputtering in the form of multilayers. They were irradiated with Ar and Si ion beams of different energies and fluences. The magnetic properties were investigated.

What problem does this paper attempt to address?

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Le-Nian He,Jin Xu

DOI: https://doi.org/10.1016/S0042-207X(02)00388-3

IF: 4

2002-01-01

Vacuum

Abstract:Amorphous SiO2 (a-SiO2) films were prepared by reactive RF magnetron sputtering method in an oxygen and argon mixture at room temperature. The chemical structure and electrical properties of the films were investigated as a function of the gas volume ratio [O2]/[Ar]. When Ar was fixed at 40sccm and O2 was increased, deposition rate would decrease firstly, then increase and finally decrease. When the [O2]/[Ar] ratio was larger than 0.075, oxide films having a stoichiometric composition can be obtained. With increasing [O2]/[Ar], the resistivity and breakdown strength of electric field for the films increased, while buffered HF etch rate decreased. Neither absorption bands due to H–OH bonds in Fourier-transform spectra, nor porosity detected by electronic scan microscope was found in all films. It was suggested that the films were densified and had good dielectric properties.
Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Alexander A. Petrunin,Michael M. Slepchenkov,Haifei Zhan,Olga E. Glukhova

DOI: https://doi.org/10.1016/j.commatsci.2023.112750

IF: 3.572

2024-01-01

Computational Materials Science

Abstract:In this work, in silico methods are used to study the temperature effect of the emission properties, including the electron work function, of quasi 2D glass-like carbon (GLC) films deposited on few/multi-layer Si/SiO2 substrates of two types. The equilibrium configuration of the structures under study at different temperatures is established by molecular dynamics (MD) method using reactive force field (ReaxFF) due to the polyatomic nature of supercells. The electronic structure is determined using the self-consistent charge density-functional based tight-binding (SCC-DFTB) method. The temperature range under consideration is 50-1000 K. The effect of one sub-strate layer and several substrate layers on the electronic structure and emission properties of GLC is considered. In the case of one layer of Si and SiO2, in fact, the functionalization of the GLC film occurs. This leads to a decrease in the work function by -6 % and -21 %, respectively, at a temperature of 300 K. As the temperature increased to 1000 K, the work function of the GLC with one SiO2 layer further decreased by -7 %. An increase in the substrate thickness to five Si layers and two SiO2 layers leads to a decrease in the work function by 7.3 % and 20.5 %, respectively. An increase in temperature leads to a change in the work function of the GLC with five Si substrate layers and two SiO2 layers by 0.2 % and 3.8 %, respectively.
Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Wenjia Yuan,Weidong Shen,Xiaowen Zheng,Chenying Yang,Yueguang Zhang,Bo Fang,Wen Mu,Chaonan Chen,Xu Liu

DOI: https://doi.org/10.3788/AOS201737.1231001

2017-01-01

Acta Optica Sinica

Abstract:The optical and mechanical properties and the microstructures of Nb2O5,Ta2O5 and SiO2 thin films prepared by the ion beam sputtering (IBS) method are studied.The effect of the assisted ion source voltage on the film properties is analyzed.The comparison among films prepared by the electron beam evaporation,ion beam assisted deposition and IBS is also conducted.The study results show that the films prepared by IBS possess better optical performance and microstructures,as well as higher compressive stress,hardness and Young modulus.The assisted ion source is beneficial to improving the optical performance,adjusting the film stress and reducing the surface roughness of thin films,however,it has relatively small influence on the hardness and the Young modulus.Under different assisted ion source voltages,the stress of prepared Nb2 O5 by IBS is-152--281 MPa,that of Ta2O5 is-299--373 MPa and that of SiO2 is-427--577 MPa.Under proper process parameters,the extinction coefficient can be smaller than 10-4 and the film surface is smooth with a root mean square roughness of smaller than 0.2 nm.
Effect of Sputtering Input Powers on Cosi2 Thin Films Prepared by Magnetron Sputtering

FX Cheng,CH Jiang,JS Wu

DOI: https://doi.org/10.1016/j.matdes.2004.06.004

2004-01-01

Materials & Design (1980-2015)

Abstract:Cobalt disilicide (CoSi2) thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target which features lower stress and more simplicity. The structure and resistivity of thin films annealed at different temperatures for different time were researched by X-ray diffraction (XRD) and four-point probe, respectively. The best electrical resistivity (23μΩcm), which is similar to the value of the thin films prepared by a solid state reaction, was obtained when the thin films were annealed at 600°C in air or argon ambient. The decrease of resistivity was attributed to the grain growth and defects decrease while the increase of resistivity was ascribed to the degradation of thin films. The thermal stability of thin films was improved by oxygen.
Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Qiyong Zeng,Xiaofeng Zheng,Zhonghua Yu,Yunxian Cui

DOI: https://doi.org/10.1109/icmtma.2010.773

2010-01-01

Abstract:Silicon dioxide thin films have been deposited successfully on high speed steel (HSS) cutting tool substrates by means of microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF reactive magnetron sputtering of a pure silica target in an oxygen and argon mixture. The films are characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FT-IR). Chemical composition of the thin films on HSS cutting tools have been investigated as a function of the gas volume ratio [O2]/[Ar], RF power and substrate bias. A comparative study of the SiO2 thin films deposited at –20V DC bias and –80V RF bias is presented. An improvement of the SiO2 thin film properties due to increased energetic substrate bombardment has been found. It is concluded that SiO2 thin films deposited on HSS cutting tools by this method are compact and dense, and have good stoichiometry and electrical insulation properties.
Ar ion irradiation effect on the soft magnetic performance of Fe-based amorphous alloys

Qiang Luo,Xindu Fan,Baowei Miao,Baolong Shen,Jun Shen

DOI: https://doi.org/10.1016/j.jmmm.2020.166962

IF: 3.097

2020-10-01

Journal of Magnetism and Magnetic Materials

Abstract:We investigate the effect of Ar ion irradiation on the microstructure and soft magnetic behaviors of Fe80CoxB14-xSi2P3Cu1 (x=0, 2, 4) amorphous alloys by using X-ray diffraction (XRD), differential scanning calorimetry (DSC) and soft magnetic performance analysis. With increasing Co content, the alloy shows decreasing radiation resistance, i.e., more degree of nanocrystallization induced by irradiation. It is found that after irradiation with fluence of ∼9.0×1014, the coercivity is reduced from 7.6 A/m to 7.0 A/m, but increases again with further increase of irradiation fluence due to the formation of larger nanosized α-Fe(Co) grains. And with increasing irradiation fluence, the saturation magnetic flux density first decreases slightly from 1.65 T to 1.64 T, and then increases gradually to 1.68 T. Further, the core loss and effective magnetic conductivity were tuned obviously by irradiation, which has been discussed in term of stress relaxation and nanocrystallization.

materials science, multidisciplinary,physics, condensed matter
Effect of ion irradiation on superconducting thin films

Katja Kohopää,Alberto Ronzani,Robab Najafi Jabdaraghi,Arijit Bera,Mário Ribeiro,Dibyendu Hazra,Jorden Senior,Mika Prunnila,Joonas Govenius,Janne S. Lehtinen,Antti Kemppinen

2024-06-20

Abstract:We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that ion irradiation increases normal-state resistivity in all our films, which is expected to enable tuning their superconducting properties, for example, toward higher kinetic inductance. We observe an increase of superconducting transition temperature for Al and MoSi, and a decrease for Nb, NbN, and TiN. In MoSi, ion irradiation also improves the mixing of the two materials. We demonstrate fabrication of an amorphous and homogeneous film of MoSi with uniform thickness, which is promising, e.g., for superconducting nanowire single-photon detectors.

Superconductivity
Effect of Electron Beam Irradiation on Structure and Properties of SiCN Thin Films Prepared by Plasma Assisted Radio Frequency Magnetron Sputtering

W. L. Li,Z. G. Zhang,J. L. Yang,W. D. Fei

DOI: https://doi.org/10.1016/j.vacuum.2011.09.013

IF: 4

2011-01-01

Vacuum

Abstract:Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)N(x) bonded structure to the (Si,C)(3)N(4) bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp(3)-hybridization of carbons bonds. (C) 2011 Elsevier Ltd. All rights reserved.
Effect of Substrate Temperatures on Texture in Thin Films by Magnetron Sputtering

FX Cheng,CH Jiang,JS Wu

DOI: https://doi.org/10.1016/j.matlet.2005.01.015

IF: 3

2005-01-01

Materials Letters

Abstract:The (111) texture was found in the as-deposited CoSi2 thin film prepared by rf magnetron sputtering using CoSi2 alloy target. It was found that the (111) texture was increased firstly and then decreased with the increasing substrate temperature. The result was compared with the other results. A new idea was proposed to explain the effect of substrate temperatures on the texture.
Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering

Stefan Karlsson,Per Eklund,Lars Österlund,Jens Birch,Sharafat Ali

2023-06-28

Abstract:Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al/Si ratio give denser structure and consequently higher hardness (7.4 to 9.5 GPa) and reduced elastic modulus (85 to 93 GPa) while at the same time lower crack resistance (2.6 to 0.9 N). The intensity of the infrared Si-O-Si/Al asymmetric stretching vibrations shows a linear dependence with respect to Al concentration. The Al-O-Al vibrational band (at 1050 cm-1) shifts towards higher wavenumbers with increasing Al concentration which indicates a decrease of the bond length, evidencing denser structure and higher residual stress, which is supported by the increased hardness. The same Al-O-Al vibrational band (at 1050 cm-1) shifts towards lower wavenumber with increasing substrate temperature indicating an increase in the of the average coordination number of Al.

Materials Science,Applied Physics
Analysis of SiO2 layer formed on Si surface by CO2 cluster ion beam irradiation

Minbo Tian,Xiaodong Feng,Yamada Isao

1997-01-01

Abstract:The titled experiments were carried out, its result show that the thickness of oxide on Si surface induced by CO2 cluster ion beam irradiation depends on the CO2 cluster size and the beam energy. The thickening of oxide layer follows the reaction rule at lower irradiation dose, and the diffusion rule at higher dose.
The effect of Ar + and N + ion irradiation on the thermally induced evolution of the structural and magnetic properties of Co/Pt and Pt/Co bilayered stacks

Roman Pedan,Ivan Kruhlov,Pavlo Makushko,Oleksandr Dubikovskyi,Oleksandr Kosulya,Andrii Orlov,Andrii Bodnaruk,Vladimir Golub,Frans Munnik,René Hübner,Denys Makarov,Igor Vladymyrskyi

DOI: https://doi.org/10.1016/j.matchemphys.2024.129862

IF: 4.778

2024-08-23

Materials Chemistry and Physics

Abstract:The application of Co–Pt thin films as functional elements of novel nanoelectronics and spintronics devices requires the formation of a homogeneous ferromagnetic CoPt phase with tunable magnetic properties. A diffusion-controlled synthesis of this ferromagnetic phase can be implemented through the annealing of deposited Co/Pt bilayers. Apart from thermal treatment, both structural and magnetic properties of such layered stacks can be affected by ion preirradiation. In this work, we, therefore, studied the effect of a two-stage process consisting of preirradiation with 110 keV Ar + /N + ions followed by post-annealing in vacuum at 550°С for 30 min on the evolution of the structural, chemical, and magnetic properties of Co/Pt/substrate and Pt/Co/substrate heterostructures. The results obtained for such two-stage processing were compared to those received after single-stage vacuum annealing. It was found that when ion preirradiation is followed by annealing, the diffusion-driven intermixing of Pt and Co leading to the formation of the ferromagnetic Co–Pt phase is slowed down compared to the non-irradiated samples, which is associated with the barrier effect of implanted projectiles. Furthermore, we demonstrate that preirradiation does not compromise the magnetic properties of the samples. For instance, preirradiation leads to a coercivity increase of up to 38 % compared to the non-irradiated annealed samples which is attributed to the presence of remaining paramagnetic Pt between the grains of the ferromagnetic A1 -CoPt phase. We demonstrate that the applied two-stage processing (consisting of ion preirradiation followed by thermal annealing) of magnetic thin films is a promising approach for tailoring their magnetic properties such as the in-plane coercivity, saturation, and effective magnetization.

materials science, multidisciplinary
Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films

Zhuguo Li,Shoji Miyake,Yixiong Wu

DOI: https://doi.org/10.1143/jjap.45.7866

IF: 1.5

2006-01-01

Japanese Journal of Applied Physics

Abstract:Ti–Si–N films were deposited on the grounded Si(100) substrates by inductively coupled plasma (ICP)-assisted magnetron sputtering. The incident ion flux density at the substrate was varied by controlling the RF power. The effects of low-energy ion flux irradiation on the growth, microstructure and mechanical properties of the Ti–Si–N films have been investigated. An increase in ion flux density causes a transfer of the preferred orientation from TiN(111) to TiN(200). Under the conditions of high-density (∼2.0 mA/cm2) low-energy (∼20 eV) ion irradiation, low-stressed superhard nanocrystalline TiN/amorphous Si3N4 (nc-TiN/a-Si3N4) film was synthesized at the relatively low deposition temperature of 300 °C.
Effect of Low-Energy Ion Irradiation on Synthesis of Hard and Superhard Films

Z. G. Li,S. Miyake,Y. X. Wu

DOI: https://doi.org/10.4028/www.scientific.net/kem.373-374.172

2008-01-01

Key Engineering Materials

Abstract:This article summarizes briefly our recent research on low-temperature synthesis of TiN, TiN/Cu and TiN/Si films by using inductively coupled plasma assisted magnetron sputtering method. It is shown that the incorporation of high-flux low-energy ion irradiation during deposition strongly affects film growth, structure evolution, morphology and mechanical properties. A main attention is devoted to the synthesis of superhard nanocomposite films at a low deposition temperature. In both TiN/Cu and TiN/Si films the maximum hardness reaches a value higher than 40 GPa.
Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

B. Panda,A. Dhar,G. D. Nigam,D. Bhattacharya,S. K. Ray

DOI: https://doi.org/10.1063/1.366802

IF: 2.877

1998-01-15

Journal of Applied Physics

Abstract:Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silicon and Si/SiO2/SiN/Pt substrates. The analysis of plasma discharge has been carried out using the Langmuir probe technique. Both the pressure and power have been found to influence the ion density and self-bias of the target. Introduction of oxygen into the discharge effectively decreases the ion density. The structural and electrical properties have been investigated using x-ray diffraction, atomic force microscopy of deposited films and capacitance–voltage, conductance–voltage, and current density–electric field characteristics of fabricated capacitors. The growth and orientation of the films have been found to depend upon the type of substrates and deposition temperatures. The 〈100〉 texture in the film is promoted at a pressure 0.25 Torr with a moderately high value of ion density and low ion bombardment energy. Films deposited on Si/SiO2/SiN/Pt substrate have shown higher dielectric constant (191) and lower leakage current density (2.8×10−6 A/cm2 at 100 kV/cm) compared to that on silicon.

physics, applied
Analysis on Effects of Thermal Treatment on Structural Characteristic of Ion Beam Sputtering SiO2 Films

季一勤,姜玉刚,刘华松,王利栓,刘丹丹,姜承慧,羊亚平,樊荣伟,陈德应

DOI: https://doi.org/10.3969/j.issn.1007-2276.2013.02.027

2013-01-01

Infrared and Laser Engineering

Abstract:SiO2 films were deposited on fused silica substrates by ion beam sputtering (IBS) technology, and the effects of thermal treatment on structural characteristic were researched. The effects of annealing temperature on surface roughness of IBS-SiO2 films were very large, low annealing temperature could reduce the surface roughness, but high annealing temperature could increase the surface roughness, the proper annealing temperature had almost no impact on surface roughness. Amorphous structures of IBS-SiO2 films were researched by XRD technology. When the annealing temperature was 550℃, the largest short range order and the shortest average distance were obtained, the results were the same as the fused silica substrate, and the structure was stable. Expermental results show that structural characteristic of IBS-SiO2 films can be improved by the proper thermal treatment.
Effect of low energy (keV) ion irradiation on structural, optical and morphological properties of SnO 2 –TiO 2 nanocomposite thin films

Vikas Kumar,M. K. Jaiswal,Rashi Gupta,Jagjeevan Ram,Indra Sulania,Sunil Ojha,Xin Sun,N. Koratkar,Rajesh Kumar

DOI: https://doi.org/10.1007/s10854-018-9457-6

2018-01-01

Abstract:RF Sputtering deposition technique was used to deposit the thin films of nanocomposite oxides as SnO 2 –TiO 2 on Si and ITO coated glass substrate. As a target, SnO 2 –TiO 2 was taken according to their molecular weight percent ratio of 3:1. Material modification has been induced by low energy ion beam with varying ion fluence from 5E13 to 5E16 ions/cm 2 . Glancing Angle X-ray Diffraction technique was used to study crystallite size, phase transformation and stability of different planes of pristine and irradiated thin films. The important peaks observed in XRD pattern were at angles 26.95°, 34.27°, 37.60°, 50.88° and 52.46°. The grain size distribution and surface morphology were studied by Atomic Force Microscopy technique in tapping mode. The results show that the grain size varies with ion fluence. Raman analysis revealed that the sharp peak at the frequency of 520 cm −1 ascribed to the T 2g mode was observed for the pristine and lowest fluence irradiated film deposited on Si substrate. With increasing ion fluence, an opposite trend in SnO 2 B 2g peak was observed at nearly 775 cm −1 and the also peak bump was observed as a function of ion beam fluence. The optical band gap decreases from 3.90 to 3.63 eV due to the generation of ions and free radicals in valance band by varying ion fluence which was observed by UV/Visible Spectroscopy. The film thickness was determined to be 220 nm using Rutherford Backscattering Spectrometry. It also confirmed the absence of any impurities in the pristine and irradiated thin films. The material properties were mainly modified by the point defects and grain size growth arising due to nuclear energy loss.
Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si (100) alloy thin films

Pooja Gupta,Yagyanidhi Tripathi,Dileep Kumar,S K Rai,Mukul Gupta,V R Reddy,Peter Svec

DOI: https://doi.org/10.1088/2053-1591/3/8/086102

IF: 2.025

2016-08-08

Materials Research Express

Abstract:The structure and magnetic properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si(100) alloy thin film have been studied as a function of film thickness using complementary techniques of x-ray reflectivity (XRR), grazing incidence x-ray diffraction, and magneto optical Kerr effect. Thicknesses of the films range from ~200 to 1500 Å. The coercivity of all the films ranges between 4 and 14 Oe, which suggests soft magnetic nature of FeCoNbB/Si thin films. Films with thickness up to 800 Å are amorphous in nature and are found to possess uniaxial magnetic anisotropy in the film plane, although no magnetic field was applied during deposition. The presence of the two fold symmetry in such amorphous thin films may be attributed to quenched-in stresses developed during deposition. Upon increasing the film thickness to ~1200 Å and above, the structure of FeCoNbB films transforms from amorphous to partially nanocrystalline structure and has bcc-FeCo nanocrystalline phase dispersed in remaining amorphous matrix. The crystalline volume fraction (cvf) of the films is found to be proportional to the film thickness. Azimuthal angle dependence of remanence confirms the presence of in-plane four-fold anisotropy (FFA) in the crystalline film with cvf ~75%. Synchrotron x-ray diffraction measurement using area detector suggests random orientation of crystallites and thus clearly establishes that FFA is not related to texture/cubic symmetry in such polycrystalline thin films. As supported by asymmetric Bragg diffraction measurements, the origin of FFA in such partially crystalline thin film is ascribed to the additional compressive stresses developed in the film upon crystallization. Results indicate that promising soft magnetic properties in such films can be optimized by controlling the film thickness. The revelation of controllable and tunable anisotropy suggests that FeCoNbB thin films can have potential application in electromagnetic applications.

materials science, multidisciplinary
Study of Crystallization and Phase Transformation in Amorphous Co-Si Thin Film by X-Ray Diffraction

FX Cheng,CH Jiang,JS Wu

DOI: https://doi.org/10.2320/matertrans.45.2471

2004-01-01

MATERIALS TRANSACTIONS

Abstract:Crystallization and phase transformation of amorphous Co0.33Si0.67 thin films prepared by radio frequency magnetron sputtering using CoSi2 alloy target were researched by X-ray diffraction in situ. The results showed that CoSi formed firstly at 250degreesC and some of the films were still amorphous. The residual amorphous films transformed to CoSi2 at 300degreesC, CoSi and CoSi2 remained stable at 350-500degreesC and CoSi transformed to CoSi2 when the temperature was elevated further. The first phase that precipitated from the amorphous Co-Si films was decided by the effective heat of formation of phases and the short-range structure of amorphous films.
Effect of deposition temperature on structural, microstructural and magnetic properties of CoFe2O4 thin films deposited by pulsed laser deposition

V. Madhav Kumar,A. Srinivas,A. Talapatra,Saket Asthana,J. Mohanty,S. V. Kamat

DOI: https://doi.org/10.1007/s10854-016-5541-y

2016-10-20

Abstract:A systematic study about the variation in microstructure and magnetic properties of Cobalt ferrite thin films, deposited on Si/SiO2/TiO2/Pt (111) substrate by using pulsed laser deposition at a constant oxygen pressure of 9 Pa with substrate temperatures ranging from 550 to 750 °C at an interval of 100 °C has been reported. All films showed the (111) preferred orientation with single phase confirmed by grazing incidence X-ray diffraction and Raman spectra. Moreover, the films showed all the active raman modes that were present in the cobalt ferrite target. The films deposited at 550 and 650 °C exhibits uniform and smooth surface features whereas deposition at 750 °C gives rise to porosities and voids due to re-evaporation of atoms from the deposited film. The grain size and roughness of the films increased with increasing deposition temperature. The induced in-plane tension in the film due to thermal expansion mismatch between substrate and film causes the increase in the perpendicular magnetic anisotropy. A sharp increase in out-of-plane coercivity and the domain size was observed at higher deposition temperatures.

Ion Beam radiation and temperature effect on Co/Si and CoO/Co/Si thin films

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Effect of Sputtering Input Powers on Cosi2 Thin Films Prepared by Magnetron Sputtering

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Ar ion irradiation effect on the soft magnetic performance of Fe-based amorphous alloys

Effect of ion irradiation on superconducting thin films

Effect of Electron Beam Irradiation on Structure and Properties of SiCN Thin Films Prepared by Plasma Assisted Radio Frequency Magnetron Sputtering

Effect of Substrate Temperatures on Texture in Thin Films by Magnetron Sputtering

Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering

Analysis of SiO2 layer formed on Si surface by CO2 cluster ion beam irradiation

The effect of Ar + and N + ion irradiation on the thermally induced evolution of the structural and magnetic properties of Co/Pt and Pt/Co bilayered stacks

Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films

Effect of Low-Energy Ion Irradiation on Synthesis of Hard and Superhard Films

Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

Analysis on Effects of Thermal Treatment on Structural Characteristic of Ion Beam Sputtering SiO2 Films

Effect of low energy (keV) ion irradiation on structural, optical and morphological properties of SnO 2 –TiO 2 nanocomposite thin films

Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si (100) alloy thin films

Study of Crystallization and Phase Transformation in Amorphous Co-Si Thin Film by X-Ray Diffraction

Effect of deposition temperature on structural, microstructural and magnetic properties of CoFe2O4 thin films deposited by pulsed laser deposition