Effect of Low-Energy Ion Flux Irradiation on Synthesis of Superhard Nanocomposite Films

Zhuguo Li,Shoji Miyake,Yixiong Wu
DOI: https://doi.org/10.1143/jjap.45.7866
IF: 1.5
2006-01-01
Japanese Journal of Applied Physics
Abstract:Ti–Si–N films were deposited on the grounded Si(100) substrates by inductively coupled plasma (ICP)-assisted magnetron sputtering. The incident ion flux density at the substrate was varied by controlling the RF power. The effects of low-energy ion flux irradiation on the growth, microstructure and mechanical properties of the Ti–Si–N films have been investigated. An increase in ion flux density causes a transfer of the preferred orientation from TiN(111) to TiN(200). Under the conditions of high-density (∼2.0 mA/cm2) low-energy (∼20 eV) ion irradiation, low-stressed superhard nanocrystalline TiN/amorphous Si3N4 (nc-TiN/a-Si3N4) film was synthesized at the relatively low deposition temperature of 300 °C.
What problem does this paper attempt to address?