Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

An Optical Emission Spectroscopy Study on the High Rate Growth of Microcrystalline Silicon Films

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Control of Grain Size During Low-Temperature Growth of Polycrystalline Silicon Films

Enhancement of Thermal Conductivity of Hydrogenated Silicon Film by Microcrystalline Structure Growth

Investigation of the microstructure and optical properties of hydrogenated polymorphous silicon films prepared with pure silane

Analysis on Steady Plasma Process of High-Rate Microcrystalline Silicon by Optical Emission Spectroscopy

HIGH GROWTH-RATE DEPOSITION OF HYDROGENATED MICROCRYSTALLINE SILICON THIN FILM WITH VHF-PECVD

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Study on Growth Mechanism of Low-Temperature Prepared Microcrystalline Si Thin F Ilms

Study on the Crystalline Silicon Films Induced by Monocrystalline Silicon with Epitaxial Growth

Modulation Effect Of Plasma Power On Crystalline Volume Fraction Of Silicon Films In The Phase Transition From A-Si : H To Mu C-Si : H

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Initial growth of intrinsic microcrystalline silicon thin film: Dependence on pre-hydrogen glow discharge and substrate surface morphology

Study on the Properties of Silicon-based Films with High Growth Rate Fabricated by VHF-PECVD at Low Temperature