Abstract:The use of individual molecules as functional electronic devices was proposed in 1974 (ref. 1). Since then, advances in the field of nanotechnology have led to the fabrication of various molecule devices and devices based on monolayer arrays of molecules2,3,4,5,6,7,8,9,10,11. Single molecule devices are expected to have interesting electronic properties, but devices based on an array of molecules are easier to fabricate and could potentially be more reliable. However, most of the previous work on array-based devices focused on two-terminal structures: demonstrating, for example, negative differential resistance8, rectifiers9, and re-configurable switching10,11. It has also been proposed that diode switches containing only a few two-terminal molecules could be used to implement simple molecular electronic computer logic circuits12. However, three-terminal devices, that is, transistors, could offer several advantages for logic operations compared to two-terminal switches, the most important of which is ‘gain’—the ability to modulate the conductance. Here, we demonstrate gain for electronic transport perpendicular to a single molecular layer (∼10–20 Å) by using a third gate electrode. Our experiments with field-effect transistors based on self-assembled monolayers demonstrate conductance modulation of more than five orders of magnitude. In addition, inverter circuits have been prepared that show a gain as high as six. The fabrication of monolayer transistors and inverters might represent an important step towards molecular-scale electronics.

Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Retraction Note To: Self-assembled Monolayer Organic Field-Effect Transistors

Retracted: Field-Effect Modulation Of The Conductance Of Single Molecules (Retracted Article. See Vol 296, Pg 1400, 2002)

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Doping: A Key Enabler for Organic Transistors

Erratum: Substrate-induced Bandgap Opening in Epitaxial Graphene.

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Experimental Demonstration of a Graphene-Based Hybrid Plasmonic Modulator: Publisher’s Note

Corrigendum: Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (2015 Nanotechnology 26 335201)

Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (vol 26, 335201, 2015)

Correction: Organic thermoelectric materials and devices based on p- and n-type Poly(metal 1,1,2,2-ethenetetrathiolate)s

Correction to “‘Clickable’ Organic Electrochemical Transistors”

Correction: Corrigendum: Growth of Semiconducting Single-Wall Carbon Nanotubes with a Narrow Band-Gap Distribution

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Inverse Square-Root Field Dependence of Conductivity in Organic Field-Effect Transistors

Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Z-scan measurement of the refractive index of graphene: erratum

Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Self-assembled Monolayer Organic Field-Effect Transistors

Self-Assembled Monolayer Transistors