Inverse Square-Root Field Dependence of Conductivity in Organic Field-Effect Transistors

J. H. Wei,Y. L. Gao,X. R. Wang

DOI: https://doi.org/10.1063/1.3083549

2008-09-02

Abstract:This paper has been withdrawn by the author.

Materials Science

What problem does this paper attempt to address?

WITHDRAWN: Dynamical study on charge injection into an open organic and inorganic semiconductor

J.Y. Fu,D.S. Liu,S.J. Xie

DOI: https://doi.org/10.1016/j.orgel.2007.10.008

IF: 3.868

2007-01-01

Organic Electronics

Abstract:This article has been withdrawn at the request of the author(s) and/or editor. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at http://www.elsevier.com/locate/withdrawalpolicy .
Withdrawal of “Fabrication and Properties of <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85}\hbox{Ti}_{3}\hbox{O}_{12}/\hbox{HfO}_{2}/\hbox{Si}$</tex></formula> Structure for Ferroelectric DRAM (FEDRAM) FET”

Dan Xie,Yongyuan Zang,Yafeng Luo,Tianling Ren,Litian Liu

DOI: https://doi.org/10.1109/LED.2009.2031531

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:This paper [ibid., vol. 30, no. 5, pp. 463-465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
Withdrawal of "fabrication and Properties of <formula Formulatype="inline"> <tex Notation="TeX">$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$</tex> </formula> Structure for Ferroelectric DRAM (FEDRAM) FET"

Dan Xie,Yongyuan Zang,Yafeng Luo,Tian‐Ling Ren,Litian Liu

DOI: https://doi.org/10.1109/led.2009.2031531

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:This paper [ibid., vol. 30, no. 5, pp. 463-465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
Lack of Resonant Spin Hall Conductance in Magnetic Field

Pei-Qing Jin,You-Quan Li

2007-01-01

Abstract:This paper has been withdrawn by the author(s) due to the discussion was made on the basis of linear term merely, which is incomplete.
Electric Field Confinement Effect on Charge Transport in Organic Field-Effect Transistors

Xiaoran Li,Andrey Kadashchuk,Ivan I. Fishchuk,Wiljan T. T. Smaal,Gerwin Gelinck,Dirk J. Broer,Jan Genoe,Paul Heremans,Heinz Baessler

DOI: https://doi.org/10.1103/physrevlett.108.066601

IF: 8.6

2012-01-01

Physical Review Letters

Abstract:While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low source-drain fields. Corroborated by scanning Kelvin probe measurements, we explain this observation by the severe difference between local conductivities within grains and at grain boundaries. Redistribution of accumulated charges creates very strong local lateral fields in the latter regions. We further confirm this picture by verifying that the charge mobility in channels having no grain boundaries, made from the same organic semiconductor, is not significantly field dependent. We show that our model allows us to quantitatively model the source-drain field dependence of the mobility in polycrystalline organic transistors.
In-depth Theoretical Analysis of the Influence of an External Electric Field on Charge Transport Parameters.

Gui-Ya Qin,Xiao-Qi Sun,Rui Wang,Jing-Fu Guo,Jian-Xun Fan,Hui Li,Lu-Yi Zou,Ai-Min Ren

DOI: https://doi.org/10.1039/d3sc06728a

IF: 8.4

2024-01-01

Chemical Science

Abstract:It is important to develop materials with environmental stability and long device shelf life for use in organic field-effect transistors (OFETs). The microscopic, molecular-level nature of the organic layer in OFETs is not yet well understood. The stability of geometric and electronic structures and the regulation of the external electric field (EEF) on the charge transport properties of four typical homogeneous organic semiconductors (OSCs) were investigated by density functional theory (DFT). The results showed that under the EEF, the structural changes in single-bond linked oligomers were more sensitive and complex than those of condensed molecules, and there were non-monotonic changes in their reorganization energy (λ) during charge transport under an EEF consisting of decreases and then increases (Series D). The change in λ under an EEF can be preliminarily and qualitatively determined by the change in the frontier molecular orbitals (FMOs) - the number of C-atoms with nonbonding characteristics. For single-bonded molecules, the transfer integral is basically unchanged under a low EEF, but it will greatly change at a high EEF. Because the structure and properties of the molecule will greatly change under different EEFs, the effect of an EEF should be fully considered when determining the intrinsic mobility of OSCs, which could cause a deviation 0.3-20 times in mobility. According to detailed calculations, one heterogeneous oligomer, TH-BTz, was designed. Its λ can be greatly reduced under an EEF, and the change in the energy level of FMOs can be adjusted to different degrees. This study provides a reasonable idea for verification of the experimental mobility value and also provides guidance for the directional design of stable high-mobility OSCs.
Thickness Dependence of Surface Morphology and Charge Carrier Mobility in Organic Field-Effect Transistors

Tian Xue-Yan,Xu Zheng,Zhao Su-Ling,Zhang Fu-Jun,Yuan Guang-Cai,Li Jing,Sun Qin-Jun,Wang Yun,Xu

DOI: https://doi.org/10.1088/1674-1056/19/1/018103

2010-01-01

Chinese Physics B

Abstract:With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit.
A comprehensive study of short channel effects in organic field-effect transistors

Joshua N. Haddock,Xiaohong Zhang,Shijun Zheng,Qing Zhang,Seth R. Marder,Bernard Kippelen

DOI: https://doi.org/10.1016/j.orgel.2005.11.002

IF: 3.868

2006-01-01

Organic Electronics

Abstract:We present a comprehensive study of short channel effects in organic field-effect transistors by measuring the electrical characteristics of devices with fixed channel width and varying channel length. Our studies are conducted on a hole transport organic semiconductor, E,E-2,5-bis-{4′-bis-(4″-methoxy-phenyl)amino-styryl}-3,4-ethylenedioxy-thiophene, that is spin-coated from solution to form bottom contact organic field-effect transistors. Drain–source currents from transistors with a channel length of 50μm show excellent agreement with the square law equations derived for crystalline Si MOSFETs in both the linear and saturation regimes. As the channel length is incrementally reduced to 1μm, device characteristics such as saturation regime channel conductance, sub-threshold current and threshold voltage, behave in a manner similar to Si MOSFETs of decreasing channel length. Results of these studies indicate the presence of non-destructive current punch-through and in addition, behavior similar to channel-length modulation and threshold-voltage roll-off, neither of which have previously been reported in OFETs.
Retraction Note To: Self-assembled Monolayer Organic Field-Effect Transistors

Jan Hendrik Schön,Hong Meng,Zhenan Bao

DOI: https://doi.org/10.1038/nature01464

IF: 64.8

2003-01-01

Nature

Abstract:Nature 413, 713–716 (2001); correction Nature 414, 470 (2001). This manuscript was, in part, the subject of an independent investigation conducted at the behest of Bell Laboratories, Lucent Technologies. The independent committee reviewed concerns related to the validity of data associated with thedevice measurements described in the paper.
Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Congwei Tan,Mengshi Yu,Junchuan Tang,Xiaoyin Gao,Yuling Yin,Yichi Zhang,Jingyue Wang,Xinyu Gao,Congcong Zhang,Xuehan Zhou,Liming Zheng,Hongtao Liu,Kaili Jiang,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41586-023-06093-6

IF: 64.8

2023-05-04

Nature

Abstract:Nature - Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

multidisciplinary sciences
WITHDRAWN: the Electroluminescence Dependence on the Organic Thickness of ZnO Nano Rods/alq3 Heterostructure Device

Suling Zhao,Pengzhi Kan,Zheng Xu,Dawei Wang,Yongsheng Wang

DOI: https://doi.org/10.1016/j.tsf.2010.03.113

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:This article has been withdrawn at the request of the author(s) and/or editor. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at http://www.elsevier.com/locate/withdrawalpolicy .
Extracting contact effects in organic field-effect transistors

B. H. Hamadani,D. Natelson,B.H. Hamadani

DOI: https://doi.org/10.48550/arXiv.cond-mat/0505081

2005-05-03

Other Condensed Matter

Abstract:Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline a general procedure to extract contact current-voltage characteristics and the true channel mobility from the transport characteristics in bottom contact poly(3-hexylthiophene) field-effect transistors, for both Ohmic and nonlinear charge injection, over a broad range of temperatures and gate voltages. Distinguishing between contact and channel contributions in bottom contact OFETs is an important step toward improved understanding and modeling of these devices.
Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Jan Hendrik Schön,Hong Meng,Zhenan Bao

DOI: https://doi.org/10.1038/nature01464

IF: 64.8

2001-01-01

Nature

Abstract:Nature 413,713–716 (2001). The values of the transconductance in Table 1 and in the text (page 715, second paragraph) are incorrect. The values should be divided by ten. The data plotted in Figs 2 and 3 are correct and the conclusions are not affected.
Recent Progress in Printable Organic Field Effect Transistors

Wei Tang,Yukun Huang,Lei Han,Ruili Liu,Yuezeng Su,Xiaojun Guo,Feng Yan

DOI: https://doi.org/10.1039/c8tc05485a

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Downscaling of printable OFETs and approaches for steep subthreshold swing have been summarized and discussed.
Research on Least-Squares Fitting Calculation of the Field-Effect Mobility

Chen Yue-Ning,Xu Zheng,Zhao Su-Ling,Sun Qin-Jun,Yin Fei-Fei,Dong Yu-Hang

DOI: https://doi.org/10.7498/aps.59.8113

2010-01-01

Abstract:In this article,organic thin-film transistors (OTFTs) with top-gate and bottom contact geometry based on pentacene as active layer were fabricated. The experimental data of the I-V were obtained from the organic thin-film transistors. The field-effect mobility of the OTFT was calculated by fitting of theoretical calculation to the experimental data. We find that field-effect mobility values have great difference by different fitting methods. We calculate the field-effect mobility by least-squares fitting method to the experimental data of the I-V away from the center of the linear region of the transfer characteristics curves 1/2 range. The inherent inaccuracy of other fitting method can be reduced. The results is the nearest field-effect mobility obtained with other methods.
Conductance-Dependent Negative Differential Resistance In Organic Memory Devices

Y. T. You,M. L. Wang,H. N. Xuxie,B. Wu,Z. Y. Sun,X. Y. Hou

DOI: https://doi.org/10.1063/1.3524263

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Single-layer organic memories made of organic material with good conductance have been characterized. Asymmetrical bistable behaviors under biases of opposite polarities are observed for devices with asymmetric electrodes. It is experimentally confirmed that a close correlation exists between the conductivity of the organic layer and the asymmetric bistability of the device under opposite biases. Inserting a block layer or thickening the organic layer will result in negative differential resistance under positive biases, leading to reversible symmetrical bistability. The phenomena are ascribed to the presence of filamentary microconducting channels in the organic layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524263]
Effect of Different Positions of Gate Electrode on the Electronic Transport Properties of Organic Molecular Field-effect Transistors

XU Yuqing,LI Dongmei,CUI Bin,JI Guomin,DU Wei,KONG Xiangru,LIU Desheng

DOI: https://doi.org/10.3969/j.issn.1004-1877.2012.03.002

2012-01-01

Abstract:By using first-principles method,which combines density functional theory with non-equilibrium Green's function,we investigate the effect of different positions of gate electrode on the electronic transport properties of organic molecular field-effect transistors.The results show that,when the size of gate electrode is not large enough to cover allover the device region and for a certain gate voltage,more significant shifting in molecular orbitals will be observed when the gate electrode is nearer the source or drain electrode.On the contrary,molecular orbitals will shift weakly when the gate electrode is near the central region of molecule.This will provide a theoretical support for the manufacture and fabrication of organic molecular field-effect transistors.
Electron-phonon and electron-electron interactions in organic field effect transistors

S. Fratini,A. F. Morpurgo,S. Ciuchi

DOI: https://doi.org/10.1016/j.jpcs.2008.03.039

2007-06-14

Abstract:Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a metallic-like to an insulating behavior upon increasing the dielectric constant of the gate material. This phenomenon can be explained in terms of the formation of small polarons, due to the polar interaction of the charge carriers with the phonons at the organic/dielectric interface. Building on this model, the possible consequences of the Coulomb repulsion between the carriers at high concentrations are analyzed.

Strongly Correlated Electrons
WITHDRAWN: Effects of Al doping on the electronic structure and thermoelectric properties of single crystal CoSi

Z.J. Pan,Chuanwei Li,Lan Ting Zhang,Kohzo Ito,Jun Wu

DOI: https://doi.org/10.1016/j.intermet.2005.10.004

IF: 4.075

2005-01-01

Intermetallics

Abstract:This article has been withdrawn at the request of the author(s) and/or editor. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at http://www.elsevier.com/locate/withdrawalpolicy .
Fractional Drift-Diffusion Model of Organic Field Effect Transistors Including Effects of Bending Stress for Smart Materials

Yi Yang,Huiwen Bai,Robert Nawrocki,Richard Voyles,Haiyan Zhang

DOI: https://doi.org/10.1115/smasis2021-68344

2021-01-01

Abstract:This paper presents a fractional drift-diffusion (Fr-DD) model to characterize the transconductance characteristics of a 6,13-bis(triisopropylsilylethynyl)pentacene TIPS-pentacene based organic field effect transistor (OFET) when bending effects are taken into account. The Fr-DD model is proposed by fractionalizing the diffusive current density in the carrier continuity equations of the conventional drift-diffusion (DD) model. Gummel's iteration is utilized to decouple the governing equations of the Fr-DD model. The solved hole concentration and electrostatic potentials on the metal-semiconductor interface are employed to approximate the terminal current flow and generate the transconductance characteristics of the OFET. Compared to the conventional DD model, the Fr-DD model does not need to consider the density of trap states (DoS) since its fractional derivative order in relation to material type, boundary conditions and bending radius can be obtained directly by fitting limited experimental data. In addition, a comparison with experimental data reveals that the Fr-DD model can result in much more accurate predictions on transconductance characteristics than the conventional DD model, especially in the subthreshold and low gate-source voltage regions of the OFET.

Inverse Square-Root Field Dependence of Conductivity in Organic Field-Effect Transistors

WITHDRAWN: Dynamical study on charge injection into an open organic and inorganic semiconductor

Withdrawal of “Fabrication and Properties of <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85}\hbox{Ti}_{3}\hbox{O}_{12}/\hbox{HfO}_{2}/\hbox{Si}$</tex></formula> Structure for Ferroelectric DRAM (FEDRAM) FET”

Withdrawal of "fabrication and Properties of &lt;formula Formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$&lt;/tex&gt; &lt;/formula&gt; Structure for Ferroelectric DRAM (FEDRAM) FET"

Lack of Resonant Spin Hall Conductance in Magnetic Field

Electric Field Confinement Effect on Charge Transport in Organic Field-Effect Transistors

In-depth Theoretical Analysis of the Influence of an External Electric Field on Charge Transport Parameters.

Thickness Dependence of Surface Morphology and Charge Carrier Mobility in Organic Field-Effect Transistors

A comprehensive study of short channel effects in organic field-effect transistors

Retraction Note To: Self-assembled Monolayer Organic Field-Effect Transistors

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

WITHDRAWN: the Electroluminescence Dependence on the Organic Thickness of ZnO Nano Rods/alq3 Heterostructure Device

Extracting contact effects in organic field-effect transistors

Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Recent Progress in Printable Organic Field Effect Transistors

Research on Least-Squares Fitting Calculation of the Field-Effect Mobility

Conductance-Dependent Negative Differential Resistance In Organic Memory Devices

Effect of Different Positions of Gate Electrode on the Electronic Transport Properties of Organic Molecular Field-effect Transistors

Electron-phonon and electron-electron interactions in organic field effect transistors

WITHDRAWN: Effects of Al doping on the electronic structure and thermoelectric properties of single crystal CoSi

Fractional Drift-Diffusion Model of Organic Field Effect Transistors Including Effects of Bending Stress for Smart Materials

Withdrawal of "fabrication and Properties of <formula Formulatype="inline"> <tex Notation="TeX">$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$</tex> </formula> Structure for Ferroelectric DRAM (FEDRAM) FET"