Abstract:Charge carrier mobility is one of the important parameters to measure to compare the behavior of different organic transistors. A high carrier mobility is essential for the organic transistors to operate at a high frequency. Recently, there have been discussions on the mobility overestimation due to gate bias dependent Schottky contacts which lead to severe nonlinearities in the current voltage characteristics, i.e., the double-slope feature. In addition, an accurate evaluation of the carrier mobility from the transfer curves requires accurate parameters such as channel dimensions or dielectric capacitance. Many of the organic field-effect transistors (OFETs) reported in the literature employ unpatterned semiconductor active layers or gate/gate dielectrics where the effective channel dimensions significantly deviate from the values defined by the source drain electrodes due to the fringe effect. To reveal the importance of the fringe effect on the mobility evaluation, here we perform a systematic investigation of OFETs with vacuum-deposited active layers in relation to the fringe effect, followed by the same analysis of solution-processed OFETs with tunable crystal morphology. By continuously narrowing down the active layer toward the actual channel region defined by the source drain electrodes, we show that the carrier mobilities are 110% and 60% overestimated in the vacuum-deposited and solution-processed devices, respectively, even with ideal linearity in the transfer curves. Herein, we suggest a model to evaluate the degree of mobility overestimation in these two families of OFETs and provide the guidelines for the design of the device geometry and channel dimensions to minimize mobility overestimation induced by the fringe effect. In our solution-processed OFETs, we conclude that a large channel width to length ratio over 20 is essential to alleviate the fringe current outside the channel, while a channel ratio greater than 40 is needed for the OFETs with vacuum-deposited semiconductor layers.

Research on Least-Squares Fitting Calculation of the Field-Effect Mobility

A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors

Contact Effect in Organic Thin Film Transistors

Comparative Study of Field-Effect Mobility with Different Expressions in Organic Thin Film Transistors

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Research on the Electrical Characteristics of an Organic Thin-Film Field-Effect Transistor Based on Alternating-Current Resistance

Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals

Thickness Dependence of Surface Morphology and Charge Carrier Mobility in Organic Field-Effect Transistors

Evaluating mobility extraction reliability in non-ideal organic transistors utilizing weak epitaxy-grown pentacene films

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region

A method for direct determination of voltage dependent contact resistance and mobility of an organic field effect transistor

Analytic Models for Organic Field-Effect Transistors Based on Exponential and Power Mobility Models

Study of Contact Resistance of High-Mobility Organic Transistors Through Comparisons

Extracting contact effects in organic field-effect transistors

In-depth Theoretical Analysis of the Influence of an External Electric Field on Charge Transport Parameters.

Extrinsic Limiting Factors of Carrier Transport in Organic Field-Effect Transistors

Comparison of Mobility Extraction Methods Based on Field-Effect Measurements for Graphene

Experimental Investigation of the Mobility in the ITIC Single Crystal Based Field-Effect Transistor

High Mobility Pentacene/C-60-Based Ambipolar Otfts by Thickness Optimization of Bottom Pentacene Layer

Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

Thin-Film Transistors with the Fringe Effect and the Correction Factor for Mobility Extraction